CM150DY-12H Powerex Inc, CM150DY-12H Datasheet - Page 2

IGBT MOD DUAL 600V 150A H SER

CM150DY-12H

Manufacturer Part Number
CM150DY-12H
Description
IGBT MOD DUAL 600V 150A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM150DY-12H

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
15nF @ 10V
Power - Max
600W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
150A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
600W
Collector Emitter Voltage V(br)ceo
2.8V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
835-1079
CM150DY-12H

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150DY-12H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM150DY-12H
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM150DY-12H
Quantity:
55
238
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
res
t
ies
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
GE
I
I
GE1
= 150A, V
E
E
= 300V, I
V
= 150A, di
= 150A, di
V
V
I
I
= 0V, V
C
C
CC
I
CE
GE
E
= V
= 15mA, V
= 150A, V
= 150A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 300V, I
= V
GE2
Per FWDi
Per IGBT
GE
CE
C
CES
GES
= 150A, V
= 15V, R
E
E
= 15V, T
= 10V, k = 1MHz
/dt = –300A/ s
/dt = –300A/ s
, V
, V
GE
CE
C
GS
GE
CE
= 150A,
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GS
= 150 C
= 4.2
Symbol
V
V
V
T
I
I
= 15V
RMS
CES
GES
P
CM
FM
I
T
I
stg
C
F
d
j
Min.
Min.
Min.
4.5
CM150DY-12H
–40 to 150
–40 to 125
2500
300*
300*
600
150
150
600
270
17
26
20
2.15
0.41
Typ.
450
Typ.
Typ.
6.0
2.1
Max.
2.8**
Max.
Max.
0.21
0.47
0.065
200
550
300
300
110
1.0
0.5
7.5
2.8
15
5.3
3
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C

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