CM200DU-24NFH Powerex Inc, CM200DU-24NFH Datasheet - Page 3

IGBT MOD DUAL 1200V 200A NFH SER

CM200DU-24NFH

Manufacturer Part Number
CM200DU-24NFH
Description
IGBT MOD DUAL 1200V 200A NFH SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200DU-24NFH

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
6.5V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
32nF @ 10V
Power - Max
830W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
830W
Collector Emitter Voltage V(br)ceo
1.2kV
Voltage
1200V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA500
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2A-NFH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DU-24NFH
Manufacturer:
NOCACAP
Quantity:
600 000
CM200DU-24NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Rev. 12/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
400
300
200
100
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
6
T
COLLECTOR-EMITTER VOLTAGE, V
T
j
j
= 25°C
= 25° C
GATE-EMITTER VOLTAGE, V
8
OUTPUT CHARACTERISTICS
2
COLLECTOR-EMITTER
10
(TYPICAL)
(TYPICAL)
4
12
V
GE
= 20V
14
15
6
I
I
I
C
C
C
= 400A
= 200A
= 80A
GE
16
, (VOLTS)
CE
, (VOLTS)
8
14
13
12
11
10
18
9
8
10
20
R th(j-c) 'Q
R th(j-c) 'D
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
R G
400
300
200
100
10
10
10
0
3
2
1
0
0
EMITTER-COLLECTOR VOLTAGE, V
V
GE
Per 1/2 Module, Thermal Grease Applied
GATE-EMITTER VOLTAGE, V
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
1
= 10V
Per FWDi 1/2 Module, T C Reference
Per IGBT 1/2 Module, T C Reference
T
T
T
T
j
j
j
j
T C Reference Point Under Chips
T C Reference Point Under Chips
5
= 25°C
= 125°C
= 25°C
= 125°C
FREE-WHEEL DIODE
Point per Outline Drawing
Point per Outline Drawing
(TYPICAL)
Per FWDi 1/2 Module,
(TYPICAL)
Per IGBT 1/2 Module,
2
10
Test Conditions
3
GE
, (VOLTS)
15
EC
, (VOLTS)
4
20
5
10
10
10
10
-1
9
8
7
6
5
4
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
Min.
COLLECTOR-EMITTER VOLTAGE, V
1.6
V
V
GE
GE
COLLECTOR-CURRENT, I
= 15V
= 0V
T
T
100
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0.04
Typ.
0
(TYPICAL)
(TYPICAL)
200
0.095
Max.
C
0.15
0.24
0.14
10
, (AMPERES)
16
1
300
C
C
C
CE
ies
oes
res
, (VOLTS)
°C/W
°C/W
°C/W
°C/W
°C/W
Units
400
10
Ω
2
3

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