MWI75-12A8 IXYS, MWI75-12A8 Datasheet - Page 2

• Manufacturer Part Number: MWI75-12A8
• Description: MOD IGBT SIXPACK RBSOA 1200V E3
• Manufacturer: IXYS

Specifications of MWI75-12A8

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 75A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 5.5nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 125
• Ic80, Tc = 80°c, Igbt, (a): 85
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 10.5
• Rthjc, Max, Igbt, (k/w): 0.25
• If25, Tc = 25°c, Diode, (a): 150
• If80, Tc = 80°c, Diode, (a): 100
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
RBSOA
SCSOA
t
I
R
Symbol
V
I
I
V
I
t
R
Ouput Inverter T1 - T6
C25
C80
CES
GES
d(on)
r
d(off)
f
SC
SC
Output Inverter D1 - D6
F25
F80
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
thJC
RRM
F
G(on)
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
V
V
R
(per IGBT)
Conditions
I
V
di
(per diode)
C
C
F
GE
CE
GE
CE
CE
CE
GE
CE
G
R
F
= 75 A; V
= 3 mA; V
= 75 A; V
/dt = -750 A/µs
= 600 V; I
= 15 W; non-repetitive
= V
= ±20 V
= 25 V; V
= 600 V; V
= 600 V; I
= ±15 V; R
= ±15 V; R
= 1200 V; V
CES
; V
GE
GE
GE
GE
F
GE
C
= 0 V
= 15 V
GE
= 75 A; V
G
= V
G
= 0 V
= 75 A
= 0 V; f = 1 MHz
GE
= 15 W;
= 15 W
= 15 V; I
CE
= ±15 V;
GE
C
= 0 V
= 75 A
V
CEK
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
< 1200 V
= 25°C
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 25°C
= 25°C
= 80°C
= 25°C
= 125°C
= 125°C
= 125°C
min.
min.
MWI 75-12A8
4.5
12.1
10.5
Ratings
typ.
Ratings
typ.
350
100
650
300
220
2.2
2.5
5.5
2.2
1.6
50
50
79
3
max.
1200
max.
1200
0.25
0.41
±20
±30
125
500
400
150
150
100
2.6
6.5
2.6
85
10
5
20090220b
2 - 6
Unit
Unit
K/W
K/W
mA
mA
mJ
mJ
nA
nC
nF
ns
ns
ns
ns
µs
ns
W
V
V
V
A
A
V
V
V
A
A
V
A
A
V
V
A