MUBW50-17T8 IXYS, MUBW50-17T8 Datasheet - Page 2

• Manufacturer Part Number: MUBW50-17T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-17T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 74A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 290W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 2200
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 130
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.10
• Vces, Inv 3 - Ph., (v): 1700
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 74
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 53
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.43
• Vces, Br Chopper, (v): 1700
• Ic80, Tc = 80°c, Br Chopper, (a): 34
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Output Inverter T1 - T6
Symbol
V
V
I
I
I
P
Symbol
V
V
I
I
C
Q
t
t
t
t
E
E
RBSOA
t
(SCSOA)
R
Output Inverter D1 - D6
Symbol
I
I
Symbol
V
I
Q
t
E
R
CES
GES
RM
C25
C80
CM
d(on)
r
d(off)
f
SC
F25
F80
rr
GE(th)
GES
CE(sat)
on
off
F
rec
CES
tot
ies
thJC
thJC
Gon
rr
Conditions
T
Continuous
T
T
T
T
Conditions
I
I
V
V
V
V
Inductive load, T
V
V
I
R
V
t
Conditions
T
T
Conditions
I
T
(per diode)
I
C
C
C
P
F
F
VJ
VJ
C
C
C
C
CE
CE
CE
CE
CE
GE
CE
C
C
G
= I
= 50 A;
= 50 A; V
= 2 mA; V
< 10 µs; non-repetitive; T
= 50 A; di
= 25°C
= 80°C
= 80°C; t
= 25°C
= 25°C
= 80°C
= 27 Ω; T
= 125°C; V
= 25°C to 150°C
= V
= 900 V; V
= 1000 V; V
= 0 V; V
= 25 V; V
= 900 V; I
= ± 15 V; R
CM
; V
CES
GE
; V
GE
GE
= 15 V
p
GE
F
GE
VJ
GE
/dt = -1200 A/µs;
= 1 ms
C
= 15 V
GE
= ± 20 V
= V
T
T
R
G
= 125°C
= 0 V
= 50 A
GE
= 0 V; f = 1 MHz
VJ
VJ
= 900 V; V
= 8 Ω
= 15 V; I
VJ
= ± 15 V; R
CE
= 25°C
= 125°C
= 125°C
C
= 75 A
GE
T
T
T
VJ
T
G
VJ
VJ
VJ
VJ
= 0 V
= 125°C
= 27 Ω
(T
= 25°C
= 125°C
= 25°C
= 125°C
VJ
= 25°C, unless otherwise specified)
V
min.
min.
CEK
5
Characteristic Values
Characteristic Values
< V
Maximum Ratings
typ.
typ.
650
600
250
500
480
CES
Maximum Ratings
2.0
2.0
2.0
2.4
1.0
4.4
50
11
12
10
80
20
9
- L
S
max.
1700
max.
0.43
0.65
± 20
di/dt
100
290
400
2.4
2.4
6.5
0.4
74
53
56
39
K/W
K/W
mA
mA
mJ
mJ
µC
mJ
nC
nA
nF
ns
ns
ns
ns
ns
µs
W
V
V
A
V
V
A
A
A
V
V
V
V
A
A
Conduction
IGBT (typ. at V
T1-T6
T7
Diode (typ. at T
D1-D6
D7
D11-D16
Equivalent Circuits for Simulation
MUBW 50-17 T8
V
I
V
V
V
V
0
0
0
0
0
= 0.83 V; R
= 1.35 V; R
= 1.65 V; R
= 1.0 V; R
= 1.0 V; R
V
GE
0
J
= 125°C)
= 15 V; T
0
0
0
0
0
= 25 mW
= 28 mW
= 4.1 mW
= 15 mW
= 37 mW
J
R
= 125°C)
0
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