MUBW50-17T8 IXYS, MUBW50-17T8 Datasheet - Page 7

• Manufacturer Part Number: MUBW50-17T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-17T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 74A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 290W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 2200
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 130
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.10
• Vces, Inv 3 - Ph., (v): 1700
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 74
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 53
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.43
• Vces, Br Chopper, (v): 1700
• Ic80, Tc = 80°c, Br Chopper, (a): 34
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
[Ω]
Output Inverter T1 - T6 / D1 - D6
[mJ]
[µC]
R
Q
10000
E
1000
rr
100
30
20
10
24
20
16
12
0
8
4
0
0
0
0
Fig. 13 Typ. turn on energy & switching times
Fig. 15 Typical turn-off characteristics
Fig. 17 Typ. NTC resistance vs. temperature
V
V
R
T
VJ
CE
GE
G
= 900 V
=
= ±15 V
= 125°C
versus collector current
20
20
of free wheeling diode
30
Temperature Sensor NTC
8 Ω
40
40
60
I
C
T [°C]
I
, I
F
V
V
R
T
F
[A]
VJ
CE
GE
G
[A]
= 900 V
=
= ±15 V
= 125°C
60
60
90
8 Ω
120
80
80
E
on
E
E
rec
off
100
100
150
[K/W]
Z
thJC
[mJ]
E
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
30
25
20
15
10
5
0
1
0
Fig. 14 Typ. turn off energy and switching times
Fig. 16 Transient thermal impedance
1
2
3
4
single pulse
0.0326
0.1311
0.1492
0.1169
V
V
I
T
C
VJ
CE
GE
/I
versus collector current
R
junction to case
F
= 900 V
i
= ±15 V
= 125°C
= 50 A
20
10
IGBT
C
R
0.0014
0.0258
0.1099
0.6361
MUBW 50-17 T8
t
R
i
t [ms]
100
G
40
[Ω]
R
C
0.1941
0.0542
0.2549
0.1461
1000
R
60
i
Diode
R
C
diode
E
E
IGBT
E
0.0206
0.0016
0.0930
0.5958
on
20090826a
off
rec
10000
t
i
80
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