MUBW50-17T8 IXYS, MUBW50-17T8 Datasheet - Page 8

• Manufacturer Part Number: MUBW50-17T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-17T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 74A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 290W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 2200
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 130
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.10
• Vces, Inv 3 - Ph., (v): 1700
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 74
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 53
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.43
• Vces, Br Chopper, (v): 1700
• Ic80, Tc = 80°c, Br Chopper, (a): 34
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
V
Brake Chopper T7 / D7
[A]
[mJ]
[V]
I
C
GE
E
60
50
40
30
20
10
30
20
10
15
10
0
0
5
0
0.0
0
0
Fig. 18 Typical output characteristic
Fig. 20 Typ. turn on energy & switching times
Fig. 22 Typ. turn on gate charge
V
V
R
T
0.5
I
V
VJ
CE
GE
CE
G
50
CE
=
= 900 V
= ±15 V
= 125°C
=
20
versus collector current
= 900 V
1.0
8 Ω
30 A
100
T
1.5
VJ
40
V
= 25°C
150
I
CE
Q
C
, I
G
2.0
F
[V]
[nC]
[A]
200
60
2.5
T
VJ
= 125°C
250
3.0
80
300
E
3.5
on
E
E
rec
off
100
350
4.0
[K/W]
Z
thJC
[mJ]
[A]
I
E
F
1.0
0.8
0.6
0.4
0.2
0.0
60
50
40
30
20
10
30
25
20
15
10
0
5
0
0.0
Fig. 19 Typ. forward characteristics of brake diode
0
1
Fig. 21 Typ. turn off energy and switching times
Fig. 23 Transient thermal impedance
single pulse
0.5
V
V
I
T
C
VJ
CE
GE
/I
versus collector current
junction to case
F
= 900 V
= ±15 V
= 125°C
= 50 A
20
10
1.0
MUBW 50-17 T8
1.5
R
t [ms]
100
G
40
V
[Ω]
F
2.0
[V]
T
VJ
= 25°C
2.5
1000
60
T
VJ
= 125°C
3.0
diode
IGBT
E
E
E
on
20090826a
off
rec
10000
3.5
80
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