CM150DY-28H Powerex Inc, CM150DY-28H Datasheet - Page 2

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CM150DY-28H

Manufacturer Part Number
CM150DY-28H
Description
IGBT MOD DUAL 1400V 150A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM150DY-28H

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1400V
Vce(on) (max) @ Vge, Ic
4.2V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
30nF @ 10V
Power - Max
1100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150DY-28H
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
CM150DY-28H
Quantity:
55
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-28H
Dual IGBTMOD™ H-Series Module
150 Amperes/1400 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current
Peak Collector Current
Emitter Current
Emitter Current-Pulse
Maximum Collector Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* I
** Pulse width and repetition rate should be such that the device junction temp. (T
*** Junction temperature (T
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Emitter-Collector Voltage
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
E
, V
EC
, T
rr
, Q
rr
& di
E
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
j
) should not increase beyond 150 C.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
C
C
d(on)
d(off)
V
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
t
EC
ies
res
t
= 25 C unless otherwise specified
rr
r
f
G
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
j
V
) does not exceed T
I
C
CC
V
GE1
I
I
= 150A, V
E
E
V
= 800V, I
V
= 150A, di
= 150A, di
V
CC
I
I
V
C
C
I
CE
GE
= V
E
GE
= 15mA, V
= 150A, V
= 800V, I
= 150A, V
Test Conditions
Test Conditions
Test Conditions
= V
= V
GE2
= 0V, V
Per FWDi
Per IGBT
GE
C
CES
GES
j(max)
= 150A, V
= 15V, R
E
E
= 15V, T
/dt = –300A/ s
/dt = –300A/ s
, V
, V
C
CE
GE
CE
GE
rating.
= 150A,
GE
CE
= 10V
= 15V
= 10V
= 0V
= 0V
G
= 0V
j
GE
= 125 C
= 2.1
Symbol
V
V
V
I
T
I
= 15V
EM
GES
I
RMS
CES
CM
P
I
T
E
stg
C
c
j
*
*
Min.
Min.
Min.
5.0
CM150DY-28H
–40 to 150
–40 to 125
1100***
300**
300**
1400
2500
150
150
270
17
26
20
2.95
Typ.
Typ.
Typ.
765
6.5
3.1
1.5
Max.
Max.
Max.
0.11
0.24
0.13
4.2*
250
500
300
400
300
1.0
0.5
8.0
3.8
10.5
30
6
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
Volts
Volts
Volts
Units
Units
Units
C
C
C/W
C/W
C/W
mA
nC
nF
nF
nF
ns
ns
ns
ns
ns
V
A
C

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