GA75TS120U Vishay, GA75TS120U Datasheet

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GA75TS120U

Manufacturer Part Number
GA75TS120U
Description
IGBT FAST 1200V 75A INT-A-PAK
Manufacturer
Vishay
Datasheet

Specifications of GA75TS120U

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
12.815nF @ 30V
Power - Max
390W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA75TS120U
Manufacturer:
IR
Quantity:
1 000
Part Number:
GA75TS120U
Quantity:
56
Part Number:
GA75TS120UPBF
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
GA75TS120UPBF
Quantity:
57
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
"HALF-BRIDGE" IGBT INT-A-PAK
Benefits
Thermal / Mechanical Characteristics
Features
V
I
I
I
I
V
V
P
P
T
T
R
R
R
SMPS, Welding
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
recovery
C
CM
LM
FM
www.irf.com
STG
CES
GE
ISOL
D
D
J
θJC
θJC
θCS
@ T
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current ➀
Peak Switching Current ➁
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂
Weight of Module
Parameter
Parameter
GA75TS120U
-40 to +150
Ultra-Fast
-40 to +125
Max.
1200
2500
±20
150
150
150
390
200
75
Typ.
200
0.1
@V
V
V
CE
GE
TM
CES
(on) typ.
PD - 50062A
=
Speed IGBT
15V
Max.
0.32
0.35
=
4.0
3.0
1200
,
I
= 2.1V
C
=
4/24/2000
V
75A
Units
Units
°C/W
N m
°C
W
V
A
V
.
g
1

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GA75TS120U Summary of contents

Page 1

... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT θJC R Thermal Resistance, Junction-to-Case - Diode θJC R Thermal Resistance, Case-to-Sink - Module θCS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂ Weight of Module www.irf.com PD - 50062A GA75TS120U Ultra-Fast Speed IGBT 1200 CES V = 2.1V CE (on) typ 15V ...

Page 2

... GA75TS120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage — GE(th) J Forward Transconductance ➃ Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T ...

Page 3

... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 10 ° 15V 0.1 2.5 4.0 Fig Typical Transfer Characteristics GA75TS120U ° ° C sink riv ifie tio 100  ° 125 ° 25V CE 80µs PULSE WIDTH 5 ...

Page 4

... GA75TS120U 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature .50 0 0.05 0 .02 0 .01 SING ( Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0 ctan gula r Pulse D uratio n (se c) ...

Page 5

... SHORTED 100 0 Fig Typical Gate Charge vs.  100 -60 -40 -20 ( Ω ) Fig Typical Switching Losses vs. GA75TS120U = 400V 75A 200 400 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω Ω = 15Ohm ; 150 C = 15V = 720V  37A 37 100 120 140 160 ° Junction Temperature ( Junction Temperature ...

Page 6

... GA75TS120U  Ω R =15Ω; 15Ohm 150 C ° 125° 720V 15V 100 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ° ° 1.0 1.4 1.8 2.2 2 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6  200 150 100 50  SAFE OPERATING AREA ...

Page 7

... ° 5° / /µs) f Fig Typical Reverse Recovery vs. di www.irf.com /dt Fig Typical Recovery Current vs GA75TS120U ° ° (A/µ / ...

Page 8

... GA75TS120U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...

Page 9

... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 600V Figure 19. Pulsed Collector Current GA75TS120U Test Circuit 600V @25°C C Test Circuit 9 ...

Page 10

... GA75TS120U Notes: ➀ Repetitive rating 20V, pulse width limited by GE max. junction temperature. ➁ See fig. 17 ➂ For screws M5x0.8 ➃ Pulse width 50µs; single shot. Case Outline — INT-A-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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