GA200SA60U Vishay, GA200SA60U Datasheet

IGBT UFAST 600V 100A SOT227

GA200SA60U

Manufacturer Part Number
GA200SA60U
Description
IGBT UFAST 600V 100A SOT227
Manufacturer
Vishay
Datasheets

Specifications of GA200SA60U

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
16.5nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*GA200SA60U
VS-GA200SA60U
VS-GA200SA60U
VSGA200SA60U
VSGA200SA60U

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
GA200SA60U
Manufacturer:
IR
Quantity:
1 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
GA200SA60UPBF
Manufacturer:
AVX
Quantity:
25 000
Price:
Thermal Resistance
• UltraFast: Optimized for minimum saturation voltage
• Very low conduction and switching losses
• Fully isolate package ( 2,500 Volt AC/RMS)
• Very low internal inductance (
• Industry standard outline
Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
• Designed for increased operating efficiency in power
• Lower overall losses available at frequencies
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
www.irf.com
Features
V
I
I
I
I
V
E
V
P
P
T
T
R
R
Wt
LM
C
C
CM
switching, > 200 kHz in resonant mode
and operating frequencies up to 40 kHz in hard
ARV
J
STG
CES
GE
ISOL
D
D
conversion: UPS, SMPS, Welding, Induction heating
θJC
θCS
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentR
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Parameter
Parameter
≤ 5 nH typ.)
≥ 20kHz
G
n-channel
Typ.
0.05
–––
GA200SA60U
30
C
E
12 lbf •in(1.3N•m)
-55 to + 150
-55 to + 150
Ultra-Fast
S O T -2 2 7
Max.
2500
± 20
600
200
100
400
400
160
500
200
@V
V
CE(on) typ.
Max.
GE
V
0.25
–––
–––
TM
CES
= 15V, I
Speed IGBT
= 600V
= 1.60V
C
4/24/2000
= 100A
Units
Units
°C/W
°C
W
mJ
gm
V
V
A
V
1

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GA200SA60U Summary of contents

Page 1

... C T Operating Junction J T Storage Temperature Range STG Mounting Torque, 6- Screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS Wt Weight of Module www.irf.com GA200SA60U Ultra-Fast n-channel ≥ 20kHz Max. 600 200 100 400 400 ± 20 160 2500 500 200 - 150 - 150 12 lbf • ...

Page 2

... GA200SA60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage DV /DT (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... J T sink Gate drive as specified Power Dissipation = 140W 1 f, Fre quen cy (kH z) (Load Current = I of fundamental) RMS 1000 100 = 15V 10 3.0 3.5 5.0 Fig Typical Transfer Characteristics GA200SA60U Triangular wave: = 90°C Clamp voltage: 80% of rated ° 150 ° 25V CE 20µs PULSE WIDTH 5µ ...

Page 4

... GA200SA60U 200 150 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.01 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 1 ...

Page 5

... Gate Resistance (Ω) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs.  100 -60 -40 - Fig Typical Switching Losses vs. GA200SA60U = 400V = 110A 200 400 600 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = Ohm 2.0 = 15V  I = 350 400 C = 480V  200 100 ...

Page 6

... GA200SA60U  60 Ω 2 Ohm 150 C ° 480V 15V 100 200 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector Current 6  1000 V = 20V 125 C J 100  SAFE OPERATING AREA 10 1 300 400 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ GA200SA60U 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... GA200SA60U SOT-227 Package Details Dimensions are shown in millimeters ( inches ) (. (. Tube QUANTITIES PER TUBE SREW AND WASHER INCLUDED IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

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