APTGF50DH60TG Microsemi Power Products Group, APTGF50DH60TG Datasheet - Page 4

• Manufacturer Part Number: APTGF50DH60TG
• Description: IGBT MODULE NPT ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DH60TG

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
100
75
50
25
50
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
0
10
4
T
J
=125°C
25
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
T
= 25°C
J
=-55°C
12
6
50
7
GE
T
75
J
=15V)
3
=-55°C
T
T
14
J
8
=25°C
J
Ic=100A
=125°C
Ic=25A
Ic=50A
100 125
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9
10
4
16
150
100
80
70
60
50
40
30
20
10
18
16
14
12
10
3.5
2.5
1.5
0.5
50
0
8
6
4
2
0
0
4
3
2
1
0
-50 -25
APTGF50DH60TG
-50
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
Ic=100A
Ic=50A
250µs Pulse Test
< 0.5% Duty cycle
I
T
Ic=25A
V
C
J
Output Characteristics (V
25
CE
= 50A
-25
= 25°C
T
, Collector to Emitter Voltage (V)
J
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
50
0
1
0
Gate Charge (nC)
V
25
Gate Charge
75
CE
T
25
=300V
J
=25°C
50
100 125 150 175 200
V
2
CE
250µs Pulse Test
< 0.5% Duty cycle
V
50
=120V
GE
75
= 15V
GE
75
T
T
100 125 150
J
J
=125°C
=10V)
=-55°C
3
V
CE
100
=480V
125
4
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