IXFN64N50P IXYS, IXFN64N50P Datasheet
IXFN64N50P
Manufacturer Part Number
IXFN64N50P
Description
MOSFET N-CH 500V 61A SOT-227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFN64N50P.pdf
(4 pages)
Specifications of IXFN64N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
50 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
61 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
9700
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
625
Rthjc, Max, (ºc/w)
0.2
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN64N50P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN64N50P
Quantity:
120
Company:
Part Number:
IXFN64N50PD2
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN64N50PD2
Quantity:
100
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
AR
DM
GS(th)
AR
AS
J
JM
stg
L
ISOL
DS(on)
DSS
DGR
GSS
GSM
D
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
V
S
ISOL
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
≤ I
= 25° C to 150° C
= 25° C
= 25° C
= 25° C
= 25° C to 150° C; R
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ 150° C, R
TM
DM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
≤ 1 mA
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 8 mA
= 250 µA
, V
G
= 32 A, Note 1
= 4 Ω
DS
= 0
t = 1 min
t = 1 s
GS
= 1 MΩ
DD
T
≤ V
J
= 125° C
DSS
JM
IXFN 64N50P
500
Min.
3.0
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
Typ.
1.5/13
1.5/13
2500
3000
500
500
150
700
150
300
±30
±40
2.5
61
64
80
20
30
±200
1000
Max.
5.5
Nm/lb.in.
Nm/lb.in.
25
85
V/ns
mJ
m Ω
° C
° C
V~
V~
°C
°C
nA
µA
µA
W
V
V
V
V
A
A
A
J
g
V
V
miniBLOC, SOT-227 B (IXFN)
Features
•
•
•
l
l
l
Advantages
l
l
l
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
E153432
G = Gate
S = Source
G
= 500
= 61
≤ ≤ ≤ ≤ ≤ 85 m Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200 ns
S
D
D = Drain
DS99349E(03/06)
S
A
V
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IXFN64N50P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved IXFN 64N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 61 150 2.5 ≤ DSS 700 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.5/13 30 Characteristic Values Min. Typ. 500 3.0 ± ...
Page 2
... C/W 0.05 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ. Max. 150 1.5 200 0.6 6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN64N50P SOT-227B Outline ° C µC A 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 ...
Page 3
... C 3.1 2.8 2.5 2.2 6V 1.9 1.6 1.3 5V 0.7 0 125º 25º 100 120 140 160 IXFN64N50P Fig. 2. Exte nde d Output Characte r is tics º 10V olts D S Fig Norm alize DS( alue vs . Junction atur 10V 64A D 1 -50 - Degrees Centigrade J Fig . 6. Dr ain Cas e ...
Page 4
... olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 1.2 1 rss IXFN64N50P Fig. 8. Trans conductance T = -40ºC J 25ºC 125º 100 mperes D Fig. 10. Gate Char 250V 32A 10m 100 Q - nanoCoulombs G Fig ...