IXFN200N07 IXYS, IXFN200N07 Datasheet

MOSFET N-CH 70V 200A SOT-227B

IXFN200N07

Manufacturer Part Number
IXFN200N07
Description
MOSFET N-CH 70V 200A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN200N07

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
70V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
480nC @ 10V
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Forward Transconductance Gfs (max / Min)
80 s
Drain-source Breakdown Voltage
70 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
70
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.006
Ciss, Typ, (pf)
9000
Qg, Typ, (nc)
480
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
520
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
L(RMS)
D25
DM
AR
GSS
DSS
DGR
GSM
J
JM
stg
DSS
GS (th)
DSS
GS
AR
AS
D
ISOL
DS(on)
d
V
V
V
T
V
Pulse test, t
V
V
T
T
Continuous
Transient
Terminal current limit
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
GS
S
ISOL
GS
GS
C
DS
DS
GS
J
J
C
C
C
C
C
J
= 25 C; Chip capability
= 25 C to 150 C; R
= 25 C to 150 C
= 10 V, I
Test Conditions
Test Conditions
= 0 V, I
= 0 V
= 0.8 • V
= V
= 25 C
= 20 V
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
1 mA
I
150 C, R
DM
GS
, di/dt
, I
TM
D
D
D
DC
= 1 mA
DSS
= 0.5 • I
= 8 mA
300 s, duty cycle d
, V
T
G
J
DS
100 A/ s, V
= 2
= 125 C
= 0
D25
GS
t = 1 s
t = 1 min
= 1 M
DD
V
(T
T
DSS
J
200N06/200N07
N06
N07
J
2 %
rr
JM
= 25 C
= 25 C, unless otherwise specified)
,
N07
N06
min.
60
70
Characteristic Values
IXFN 200 N06
IXFN 200 N07
-
-
-
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
150
2
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
200
100
600
100
520
30
30
70
60
20
30
2
max.
5
200
400
mA
4
6 m
V/ns
mJ
V~
V~
nA
W
C
C
C
V
V
A
A
V
V
V
A
V
V
A
A
J
g
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
60 V
70 V
rr
V
International standard packages
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DSS
250 ns
E153432
DS (on)
G
200 A
200 A
HDMOS
I
D25
S
D = Drain
D
TM
DS97533B(02/03)
process
6
6
S
R
DS(on)
m
m

IXFN200N07 Summary of contents

Page 1

... GSS 0.8 • V DSS DS DSS 125 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFN 200 N06 IXFN 200 N07 rr Maximum Ratings N07 70 N06 200N06/200N07 200 100 600 JM 100 DSS 520 -55 ... +150 150 -55 ...

Page 2

... -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 60 80 9000 4000 2400 0.5 • ...

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