IXFN200N07 IXYS, IXFN200N07 Datasheet - Page 2

MOSFET N-CH 70V 200A SOT-227B

IXFN200N07

Manufacturer Part Number
IXFN200N07
Description
MOSFET N-CH 70V 200A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN200N07

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
70V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
480nC @ 10V
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Forward Transconductance Gfs (max / Min)
80 s
Drain-source Breakdown Voltage
70 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
70
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.006
Ciss, Typ, (pf)
9000
Qg, Typ, (nc)
480
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
520
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN200N07
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN200N07
Manufacturer:
IXYS
Quantity:
200
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
SM
S
RM
d(on)
r
d(off)
f
rr
fs
iss
oss
rss
SD
g(on)
gs
gd
thJC
thCK
RM
Test Conditions
V
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t
F
GS
DS
= 100 A, V
I
-di/dt = 100 A/ s,
V
F
= 0 V
= 10 V; I
V
V
R
V
R
= 25 A
GS
GS
GS
G
= 50 V
= 1
= 0 V, V
= 10 V, V
= 10 V, V
GS
D
(External),
300 s, duty cycle d
= 0.5 • I
= 0 V,
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
(T
(T
DSS
DSS
J
J
, I
, I
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
JM
= 0.5 • I
= 0.5 • I
2 %
min.
min.
D25
D25
60
Characteristic Values
Characteristic Values
4,835,592
4,850,072
9000
4000
2400
typ.
typ.
0.05
150
100
480
240
0.7
80
30
60
60
60
9
4,881,106
4,931,844
0.24
200
600
max.
max.
250
1.7
K/W
K/W
5,017,508
5,034,796
nC
nC
nC
pF
pF
pF
IXFN 200N06 IXFN 200N07
ns
ns
ns
ns
ns
C
S
V
A
A
A
miniBLOC, SOT-227 B
5,049,961
5,063,307
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Min.
Millimeter
5,187,117
5,237,481
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1
5,486,715
5,381,025
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
6,306,728B1
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.

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