IXFN360N15T2 IXYS, IXFN360N15T2 Datasheet

MOSFET N-CH 150V 310A SOT227

IXFN360N15T2

Manufacturer Part Number
IXFN360N15T2
Description
MOSFET N-CH 150V 310A SOT227
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet

Specifications of IXFN360N15T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
310A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
715nC @ 10V
Input Capacitance (ciss) @ Vds
47500pF @ 25V
Power - Max
1070W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
265 ns
Supply Current
100 A
Maximum Power Dissipation
1070 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
50 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
310 A
Output Voltage
150 V
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
310
Rds(on), Max, Tj=25°c, (?)
0.004
Ciss, Typ, (pf)
47500
Qg, Typ, (nc)
715
Pd, (w)
1070
Rthjc, Max, (k/w)
0.14
Package Style
SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFN360N15T2
Manufacturer:
CUI
Quantity:
23 000
Price:
GigaMOS
HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
TrenchT2
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
GS
≤ 175°C
= 1MΩ
Advance Technical Information
T
J
= 150°C
JM
IXFN360N15T2
Min.
150
Characteristic Values
2.5
-55 ... +175
-55 ... +175
Maximum Ratings
1.3/11.5
1.5/13
1070
2500
3000
TBD
150
150
±20
±30
310
200
900
100
175
300
260
Typ.
30
20
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
4.0 mΩ
5.0
50
5 mA
V/ns
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
V
I
R
t
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
miniBLOC, SOT-227
G = Gate
S = Source
D25
rr
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation voltage 2500
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Isolation
Synchronous Recification
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
DS(on)
G
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D = Drain
150V
310A
4.0mΩ Ω Ω Ω Ω
150ns
D
DS100180(08/09)
V~
S

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IXFN360N15T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN360N15T2 Maximum Ratings 150 = 1MΩ 150 GS ±20 ±30 310 200 900 JM 100 TBD ≤ 175° 1070 -55 ... +175 175 -55 ... +175 300 260 2500 3000 1 ...

Page 2

... I = 180A 185 DSS D 200 0.05 Characteristic Values Min. Typ. JM 0.50 9.00 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN360N15T2 Max. SOT-227B (IXFN) Outline (M4 screws (4x) supplied 0.14 °C/W °C/W Max. 360 A 1440 A 1.2 V 150 ns μC A ...

Page 3

... Value vs. D 220 200 180 160 T = 175ºC J 140 120 100 25º 200 250 300 350 IXFN360N15T2 Fig. 2. Extended Output Characteristics @ T = 25º 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 150ºC J 25ºC - 40ºC 4.5 5.0 5 25ºC J 0.7 0.8 0.9 1.0 1.1 1,000.0 C iss 100.0 C oss 10.0 C rss Volts IXFN360N15T2 Fig. 8. Transconductance 450 400 350 300 250 200 150 100 100 120 I - Amperes D Fig. 10. Gate Charge 75V 9 ...

Page 5

... V = 10V 75V 700 DS 200 600 180 500 160 400 140 300 120 200 100 100 1 140 160 180 200 IXFN360N15T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 75V 25º 125º 100 120 140 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXFN360N15T2 0.1 1 IXYS REF: F_360N15T2 (9V)08-19-09 10 ...

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