IXTN60N50L2 IXYS, IXTN60N50L2 Datasheet

MOSFET N-CH 53A 500V SOT-227

IXTN60N50L2

Manufacturer Part Number
IXTN60N50L2
Description
MOSFET N-CH 53A 500V SOT-227
Manufacturer
IXYS
Series
Linear L2™r
Datasheet

Specifications of IXTN60N50L2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
610nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
735W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
53
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
610
Trr, Typ, (ns)
980
Pd, (w)
735
Rthjc, Max, (k/w)
0.17
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Linear L2
MOSFET
N-Channel Enhancement Mode
Extended FBSOA
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal Connection torque
V
V
V
V
V
V
Test Conditions
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
GS
Power
DSS
, I
D
D
D
= 1mA
= 250μA
= 30A Note 1
DS
= 0V
t = 1 minute
t = 1 second
GS
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTN60N50L2
-55 ... +150
-55 ... +150
Maximum Ratings
Characteristic Values
500
Min.
2.5
1.3/11.5
1.5/13
2500
3000
500
500
±30
±40
150
735
150
300
260
53
30
60
Typ.
3
±200 nA
Nm/lb.in.
Nm/lb.in.
100 mΩ
4.5
Max.
50
5 mA
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
Either source terminal S can be used as the
source terminal or the Kelvin source (gate
return) terminal.
Features
Applications
Advantages
miniBLOC, SOT-227
G = Gate
S = Source
D25
Designed for linear operation
International standard package
Molding epoxy meets UL94 V-0
flammability classification
miniBLOC with Aluminium nitride
isolation
Programmable loads
Current regulators
DC-DC converters
Battery chargers
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
100mΩ Ω Ω Ω Ω
500V
53A
D
DS100086(12/08)
S

Related parts for IXTN60N50L2

IXTN60N50L2 Summary of contents

Page 1

... D = ±30V GSS DSS DS DSS 10V 30A Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTN60N50L2 Maximum Ratings 500 = 1MΩ 500 GS ±30 ±40 53 150 735 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min. Typ. ...

Page 2

... DSS D 365 0.05 Min. Typ. = 75° 360 C Characteristic Values Min. Typ. JM 980 73 35.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN60N50L2 Max. SOT-227B (IXTN) Outline (M4 screws (4x) supplied 0.17 °C/W °C/W Max. W Max 240 A 1 μC ...

Page 3

... Value 125º 25ºC J 100 120 140 160 IXTN60N50L2 Fig. 2. Extended Output Characteristics @ 25ºC 160 V = 20V GS 14V 140 12V 120 10V 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2.6 V ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC J 25ºC - 40ºC 7.0 7.5 8.0 8.5 9.0 9 25ºC J 0.9 1.0 1.1 1.2 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXTN60N50L2 Fig. 8. Transconductance 40º 25ºC 35 125º Amperes D Fig. 10. Gate Charge ...

Page 5

... C Single Pulse 0.1 10 100 V - Volts DS © 2008 IXYS CORPORATION, All rights reserved = 25ºC 1,000.0 100.0 25µs 100µs 1ms 10.0 10ms 100ms DC 1000 IXTN60N50L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on) 1 150º 75ºC C Single Pulse 0.1 10 100 V - Volts DS 25µ ...

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