IXFN180N15P IXYS, IXFN180N15P Datasheet
IXFN180N15P
Specifications of IXFN180N15P
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IXFN180N15P Summary of contents
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... GS(th GSS DSS DS DSS DS(on Pulse test, t 300 s, duty cycle d © 2006 IXYS All rights reserved IXFN 180N15P Maximum Ratings 150 = 1 M 150 150 100 380 JM 60 100 DSS 680 -55 ... +175 175 -55 ... +150 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 2500 3000 300 30 Characteristic Values Min ...
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... Pulse test, t 300 s, duty cycle -di/dt = 100 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values ( unless otherwise specified) J Min. Typ. Max 7000 2250 ...
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... D S Fig Norm alize DS(on) V alue ain Cur re nt 3.4 3.1 2.8 2.5 2.2 1 15V GS 1.6 1 100 150 mperes D © 2006 IXYS All rights reserved º C 320 = 10V GS 280 9V 240 8V 200 160 7V 120 1.2 1.6 2 º C 2.8 = 10V GS 2 ...
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... Fig. 9. Sour ce Cur Source -To-Drain V oltage 350 300 250 200 150 º 150 C 100 0.3 0.5 0.7 0 olts S D Fig. 11. Capacitance 100,000 10,000 1,000 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 120 100 7 º 1.1 1.3 1 ...
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... IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.001 0.01 Pulse Width - Seconds IXFN 180N15P 0 IXYS REF: T_180N15P (88) 03-23-06-C.xls ...