IXFN200N10P IXYS, IXFN200N10P Datasheet

no-image

IXFN200N10P

Manufacturer Part Number
IXFN200N10P
Description
MOSFET N-CH 100V 200A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN200N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
680W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
680 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
680
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN200N10P
Manufacturer:
KEMET
Quantity:
30 000
Part Number:
IXFN200N10P
Manufacturer:
IXYS
Quantity:
487
Part Number:
IXFN200N10P
Manufacturer:
IXYS
Quantity:
650
Polar
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
© 2006 IXYS All rights reserved
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
50/60 Hz, RMS,
I
Mounting torque, Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
ISOL
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
HiPerFET
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA,
= 0 V, I
= V
= ±20 V, V
= V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS,
, I
D
D
V
D
D
= 250 μA
= 8 mA
GS
G
= 0.5 I
= 400A
DS
= 0 V
= 4 Ω
= 0
D25
GS
= 1 MΩ
DD
T
T
≤ V
J
J
= 150°C
= 175°C
IXFN 200N10P
T = 1 min
T = 1 s
DSS
JM
,
100
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
5.5
1.5/13
2500
3000
100
100
±20
±30
200
100
400
100
680
175
60
10
30
4
±100
500
Max.
5.0
2.5
7.5
25
lb.in.
V/ns
mA
mJ
V~
V~
nA
μA
μA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
Applications
Advantages
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
V
I
R
t
E153432
D25
rr
DS (on)
DS(on)
DSS
G
HDMOS
S
D = Drain
= 100 V
= 200 A
≤ ≤ ≤ ≤ ≤ 7.5 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 150 ns
D
TM
process
DS99239E(03/06)
S

Related parts for IXFN200N10P

IXFN200N10P Summary of contents

Page 1

... DSS DS DSS 0.5 I DS(on D25 400A GS D Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFN 200N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 200 100 400 JM 60 100 4 ≤ DSS 680 -55 ... +175 175 -55 ...

Page 2

... dI/dt = 100 A/μ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 60 97 7600 ...

Page 3

... D S Fig Nor m alize DS(on) V alue vs . Drain Curr e nt 2.4 2.2 2 1.8 1 10V GS 1 15V - - - - GS 1.2 1 0.8 0 100 150 200 mperes D © 2006 IXYS All rights reserved C 350 300 250 8V 200 150 7V 100 1.2 1.4 1.6 C 2.4 2 1.8 1.6 7V 1 ...

Page 4

... Source -To-Drain V oltage 350 300 250 200 150 100 º 150 0.4 0.6 0 olts S D Fig. 11. Capacitance 100,000 f = 1MH z 10,000 1,000 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 7 º 1.2 1.4 1 ...

Page 5

... Fig. 13. Maximum Transient Thermal Resistance 1.000 0.100 0.010 0.001 0.00001 0.0001 © 2006 IXYS All rights reserved 0.001 0.01 Pulse Width - Seconds IXFN 200N10P 0 IXYS REF: T_200N10P (88) 03-22-06-E.xls ...

Related keywords