IXFN200N10P IXYS, IXFN200N10P Datasheet - Page 2

• Manufacturer Part Number: IXFN200N10P
• Description: MOSFET N-CH 100V 200A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN200N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 680W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 680 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 235
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 680
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
fs
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, dI/dt = 100 A/μs
= 50 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
GS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= 60 A
(T
(T
J
J
5,049,961
5,063,307
5,187,117
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
60
Characteristic Values
Characteristic Values
7600
2900
Typ.
Typ.
0.05
860
150
235
135
0.4
97
30
35
90
50
6,162,665
6,259,123 B1
6,306,728 B1
6
0.22 °C/W
Max.
Max.
200
400
150 ns
1.5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
SOT-227B (IXFN) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 200N10P