IXFN200N10P IXYS, IXFN200N10P Datasheet - Page 5

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IXFN200N10P

Manufacturer Part Number
IXFN200N10P
Description
MOSFET N-CH 100V 200A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN200N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
680W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
680 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
680
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN200N10P
Manufacturer:
KEMET
Quantity:
30 000
Part Number:
IXFN200N10P
Quantity:
129
IXFN 200N10P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_200N10P (88) 03-22-06-E.xls

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