IXFN64N60P IXYS, IXFN64N60P Datasheet
IXFN64N60P
Specifications of IXFN64N60P
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IXFN64N60P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFN 64N60P Maximum Ratings 600 = 1 MΩ 600 GS ± 30 ± 150 3.5 ≤ DSS 700 -55 ... +150 150 -55 ... +150 300 2500 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 Characteristic Values Min. ...
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... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
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... V - Volts DS Fig Normalized to I DS(on) Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 160 140 120 100 3 10V GS 2.8 7V 2.5 2.2 6V 1.9 1.6 1 0.7 0 -50 = 32A 125º ...
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... Intrinsic Diode 140 120 100 125º 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 130 120 110 100 5 25º 0.9 1 1.1 1.2 ...
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... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFN 64N60P 1 10 ...