IXFN64N60P IXYS, IXFN64N60P Datasheet

MOSFET N-CH 600V 50A SOT-227

IXFN64N60P

Manufacturer Part Number
IXFN64N60P
Description
MOSFET N-CH 600V 50A SOT-227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFN64N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
96 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.096 Ohms
Forward Transconductance Gfs (max / Min)
63 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.096
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN64N60P
Manufacturer:
IR
Quantity:
1 000
Part Number:
IXFN64N60P
Manufacturer:
IXYS
Quantity:
392
Part Number:
IXFN64N60P
Manufacturer:
IXYS
Quantity:
650
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
DM
AR
© 2006 IXYS All rights reserved
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting torque
Terminal torque
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt £ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
G
= 0.5 I
= 2 Ω
DS
= 0
D25
, Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFN 64N60P
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
2500
± 30
± 40
600
600
150
700
150
300
3.5
50
64
80
20
30
±200
1000
Max.
5.0
25
96
V/ns
m Ω
mJ
nA
µA
µA
V~
°C
°C
°C
°C
W
g
V
V
V
V
V
V
A
A
A
J
miniBLOC, SOT-227 B (IXFN)
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
Applications
Advantages
V
I
R
t
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
D25
rr
DS(on)
DSS
G = Gate
S = Source
E153432
DS (on)
G
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
HDMOS
S
600
200
D
TM
50
96 m Ω Ω Ω Ω Ω
D = Drain
process
DS99443E(01/06)
S
ns
A
V

Related parts for IXFN64N60P

IXFN64N60P Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFN 64N60P Maximum Ratings 600 = 1 MΩ 600 GS ± 30 ± 150 3.5 ≤ DSS 700 -55 ... +150 150 -55 ... +150 300 2500 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 Characteristic Values Min. ...

Page 2

... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...

Page 3

... V - Volts DS Fig Normalized to I DS(on) Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 160 140 120 100 3 10V GS 2.8 7V 2.5 2.2 6V 1.9 1.6 1 0.7 0 -50 = 32A 125º ...

Page 4

... Intrinsic Diode 140 120 100 125º 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 130 120 110 100 5 25º 0.9 1 1.1 1.2 ...

Page 5

... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFN 64N60P 1 10 ...

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