IXFN64N60P IXYS, IXFN64N60P Datasheet - Page 4

MOSFET N-CH 600V 50A SOT-227

IXFN64N60P

Manufacturer Part Number
IXFN64N60P
Description
MOSFET N-CH 600V 50A SOT-227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFN64N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
96 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.096 Ohms
Forward Transconductance Gfs (max / Min)
63 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.096
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN64N60P
Manufacturer:
IR
Quantity:
1 000
Part Number:
IXFN64N60P
Quantity:
119
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
100
140
120
100
1,000
90
80
70
60
50
40
30
20
10
80
60
40
20
100
0
0
10
3.5
0.3
0
0.4
f = 1 MHz
4
Fig. 9. Forward Voltage Drop of
5
0.5
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
0.6
T
Intrinsic Diode
J
T
= 125ºC
V
J
V
15
V
GS
= 125ºC
SD
- 40ºC
5
DS
0.7
25ºC
- Volts
- Volts
- Volts
20
0.8
5.5
25
T
0.9
J
= 25ºC
C iss
C oss
C rss
6
30
1
6.5
35
1.1
1.2
40
7
1,000
100
130
120
110
100
10
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
R
T
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
DS(on)
J
D
G
DS
20
10
= - 40ºC
= 32A
= 10mA
125ºC
= 300V
25ºC
Limit
40
20
Fig. 8. Transconductance
60
30
Q
Fig. 10. Gate Charge
G
I
- NanoCoulombs
D
V
80
40
- Amperes
DS
- Volts
100
100
50
DC
120
60
IXFN 64N60P
140
70
160
80
T
T
J
C
= 150ºC
= 25ºC
180
90
25µs
100µs
1ms
10ms
1000
100
200

Related parts for IXFN64N60P