IXFN64N60P IXYS, IXFN64N60P Datasheet - Page 5

• Manufacturer Part Number: IXFN64N60P
• Description: MOSFET N-CH 600V 50A SOT-227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN64N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 96 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.096 Ohms
• Forward Transconductance Gfs (max / Min): 63 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 50 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.096
• Ciss, Typ, (pf): 12000
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFN 64N60P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
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