IXTN32P60P IXYS, IXTN32P60P Datasheet - Page 4

• Manufacturer Part Number: IXTN32P60P
• Description: MOSFET P-CH 600V 32A SOT227
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTN32P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): -600
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.350
• Ciss, Typ, (pf): 11100
• Qg, Typ, (nc): 196
• Trr, Typ, (ns): 480
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
-100
100
-45
-40
-35
-30
-25
-20
-15
-10
-90
-80
-70
-60
-50
-40
-30
-20
-10
10
-5
0
0
-3.0
0
-0.8
f
-5
= 1 MHz
-3.5
-1.2
Fig. 9. Forward Voltage Drop of
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-4.0
-1.6
T
-15
Intrinsic Diode
T
J
J
= 125ºC
V
= 125ºC
- 40ºC
V
V
GS
25ºC
-2.0
SD
DS
-4.5
-20
- Volts
- Volts
- Volts
-2.4
C oss
C rss
-25
C iss
-5.0
T
-2.8
J
-30
= 25ºC
-5.5
-3.2
-35
-6.0
-3.6
-40
-
100.0
-
10.0
-
-
60
55
50
45
40
35
30
25
20
15
10
-10
1.0
0.1
5
0
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-
0
10
0
R
DS(on)
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
-5
V
I
I
J
C
20
D
G
= 150ºC
DS
= 25ºC
= -16A
= -1mA
Limit
= - 300V
-10
40
Fig. 8. Transconductance
-15
60
Fig. 10. Gate Charge
Q
G
-20
80
I
- NanoCoulombs
D
V
- Amperes
DS
DC, 100ms
-
-25
100
100
- Volts
IXTN32P60P
-30
120
T
J
= - 40ºC
-35
140
160
-40
25ºC
125ºC
180
-45
25µs
100µs
1ms
10ms
-
1000
200
-50