IXTN32P60P IXYS, IXTN32P60P Datasheet - Page 5

• Manufacturer Part Number: IXTN32P60P
• Description: MOSFET P-CH 600V 32A SOT227
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTN32P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): -600
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.350
• Ciss, Typ, (pf): 11100
• Qg, Typ, (nc): 196
• Trr, Typ, (ns): 480
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTN32P60P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_32P60P(B9) 6-03-08