IXFN120N20 IXYS, IXFN120N20 Datasheet

IXFN120N20

Manufacturer Part Number

IXFN120N20

Description

MOSFET N-CH 200V 120A SOT-227B

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.IXFN120N20.pdf (4 pages)

Specifications of IXFN120N20

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

17 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

4V @ 8mA

Gate Charge (qg) @ Vgs

360nC @ 10V

Input Capacitance (ciss) @ Vds

9100pF @ 25V

Power - Max

600W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Configuration

Single Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.017 Ohms

Forward Transconductance Gfs (max / Min)

77 s

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

120 A

Power Dissipation

600 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

200

Id(cont), Tc=25°c, (a)

120

Rds(on), Max, Tj=25°c, (?)

0.017

Ciss, Typ, (pf)

9100

Qg, Typ, (nc)

360

Trr, Typ, (ns)

Trr, Max, (ns)

250

Pd, (w)

568

Rthjc, Max, (ºc/w)

0.22

Package Style

SOT-227B

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFN120N20

Manufacturer:

TOSHIBA

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFN120N20P

Manufacturer:

MICROCHIP

Quantity:

2 000

Current page: 1 of 4
Download datasheet (158Kb)

HiPerFET

Power MOSFETs

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

Symbol

dv/dt

Weight

GSS

D25

DSS

stg

GS(th)

DGR

GSM

ISOL

DSS

DS(on)

DSS

Note 1

Test Conditions

Continuous

Transient

1.6 mm (0.063 in.) from case for 10 s

50/60 Hz, RMS

Mounting torque

Terminal connection torque

ISOL

= 0 V, I

= V

= 25 C to 150 C

= 25 C to 150 C; R

= 25 C

= 25 C, pulse width limited by T

= 25 C

= 0 V

= 20 V, V

= V

= 10 V, I

150 C, R

1 mA

DSS

, di/dt 100 A/ s, V

, I

= 3mA

= 8mA

= 0.5 • I

= 2

= 0

t = 1 min

t = 1 s

D25

= 1 M

= 25 C, unless otherwise specified)

DSS

= 25 C

= 125 C

IXFN 120N20

200

min.

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

1.5/13 Nm/lb.in.

2500

3000

200

120

480

120

600

150

max.

100

200 nA

17 m

2 mA

V/ns

4 V

Features

• Encapsulating epoxy meets

•

Applications

•

Advantages

•

G = Gate

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

miniBLOC, SOT-227 B (IXFN)

UL 94 V-0, flammability classification

International standard package

miniBLOC, with Aluminium nitride

isolation

Low R

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

Low voltage relays

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Temperature and lighting controls

Easy to mount

Space savings

High power density

D25

E153432

DSS

DS(on)

DS (on)

250 ns

HDMOS

= 200

= 120

D = Drain

DS96538D(03/03)

17 m

process

Related parts for IXFN120N20

IXFN120N20 Summary of contents

Page 1

... 8mA GS(th GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2003 IXYS All rights reserved IXFN 120N20 rr Maximum Ratings 200 = 1 M 200 120 480 JM 120 DSS 600 -55 ... +150 150 -55 ... +150 - 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values ( unless otherwise specified) J min ...

Page 2

... Note: 1. Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Note 1 40 ...

Page 3

... Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Norm alized to I DS(on) Value vs 25º 25º 0 Amperes D © 2003 IXYS All rights reserved 2 D25 IXFN 120N20 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Norm alized to I Value vs. DS(on) D25 Junction Temperature 2 ...

Page 4

... SD Fig. 11. Capacitance 1 0000 C iss C oss 1 000 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 5 25º 4,835,592 4,881,106 4,850,072 4,931,844 IXFN 120N20 Fig. 8. Transconductance ...

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