IXFN320N17T2 IXYS, IXFN320N17T2 Datasheet

MOSFET N-CH 170V 260A SOT227

IXFN320N17T2

Manufacturer Part Number
IXFN320N17T2
Description
MOSFET N-CH 170V 260A SOT227
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet

Specifications of IXFN320N17T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
170V
Current - Continuous Drain (id) @ 25° C
260A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
640nC @ 10V
Input Capacitance (ciss) @ Vds
45000pF @ 25V
Power - Max
1070W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
230 ns
Supply Current
100 A
Maximum Power Dissipation
1070 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
46 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
260 A
Output Voltage
170 V
Vdss, Max, (v)
170
Id(cont), Tc=25°c, (a)
260
Rds(on), Max, Tj=25°c, (?)
0.0052
Ciss, Typ, (pf)
45000
Qg, Typ, (nc)
640
Pd, (w)
1070
Rthjc, Max, (k/w)
0.14
Package Style
SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN320N17T2
Manufacturer:
HYNIX
Quantity:
4 300
GigaMOS
HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
TrenchT2
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
GS
≤ 175°C
= 1MΩ
Advance Technical Information
T
J
= 150°C
JM
IXFN320N17T2
170
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.3/11.5
1.5/13
1070
2500
3000
170
170
±20
±30
260
200
800
100
175
300
260
Typ.
30
20
5
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
5.2 mΩ
5.0
50
5 mA
V/ns
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
V
I
R
t
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
miniBLOC, SOT-227
G = Gate
S = Source
D25
rr
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation Voltage 2500
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Isolation
Synchronous Recification
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
DS(on)
G
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D = Drain
170V
260A
5.2mΩ Ω Ω Ω Ω
150ns
D
DS100189(09/09)
V~
S

Related parts for IXFN320N17T2

IXFN320N17T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN320N17T2 Maximum Ratings 170 = 1MΩ 170 GS ±20 ±30 260 200 800 JM 100 5 ≤ 175° 1070 -55 ... +175 175 -55 ... +175 300 260 2500 3000 1 ...

Page 2

... I = 160A 185 DSS D 175 0.05 Characteristic Values Min. Typ. JM 0.53 9.00 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN320N17T2 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied °C/W 0.14 °C/W Max. 320 A 1280 A 1.25 V 150 ns μ ...

Page 3

... Value vs. D 220 200 180 160 T = 175ºC J 140 120 100 25º 250 300 350 400 IXFN320N17T2 Fig. 2. Extended Output Characteristics @ T = 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 400 350 300 250 200 150 25ºC - 40ºC 100 50 5.0 5.5 6 25ºC J 0.8 0.9 1.0 1.1 1.2 1.3 1,000.0 C iss 100.0 10.0 C oss 1.0 C rss 0 IXFN320N17T2 Fig. 8. Transconductance 100 120 I - Amperes D Fig. 10. Gate Charge V = 85V 160A 10mA 100 200 ...

Page 5

... T = 125ºC J 500 160 400 140 = 25ºC J 300 120 200 100 100 80 140 160 180 200 IXFN320N17T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 85V 125º 25º 100 120 140 I - Amperes D Fig ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXFN320N17T2 0.1 1 IXYS REF: F_320N17T2(9V)9-02-09 10 ...

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