IXKN75N60C IXYS, IXKN75N60C Datasheet
IXKN75N60C
Manufacturer Part Number
IXKN75N60C
Description
MOSFET N-CH 600V 75A SOT-227B
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKN75N60C.pdf
(4 pages)
Specifications of IXKN75N60C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3.9V @ 5mA
Gate Charge (qg) @ Vgs
500nC @ 10V
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
560 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.036
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
500
Trr, Max, (ns)
-
Trr, Typ, (ns)
580
Pd, (w)
560
Rthjc, Max, (k/w)
0.22
Visol, Rms, (v)
2500
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKN75N60C
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXKN75N60C
Manufacturer:
IXYS
Quantity:
20 000
Part Number:
IXKN75N60C
Quantity:
138
CoolMOS
N-Channel Enhancement Mode
Low R
Symbol
V
V
I
I
dv/dt
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
D25
D90
DSS
GSS
d(off)
d(on)
r
f
DSS
GS
AS
AR
GSth
F
DSon
g
gd
thJC
gs
DSon
, High V
Conditions
T
T
T
V
T
I
I
Conditions
V
V
V
V
(reverse conduction) I
D
D
VJ
C
C
VJ
DS
GS
DS
DS
GS
= 10 A; L = 36 mH; T
= 20 A; L = 5 µH; T
= 25°C
= 90°C
= 25°C to 150°C
= 150°C
V
V
I
= 20 V; I
= V
< V
= 10 V; I
= ±20 V; V
D
GS
GS
= 100 A; R
™ 1)
= 10 V; V
= 10 V; V
DSS
DSS
DSS
; I
; V
F
D
D
GS
Power MOSFET
≤ 100A;⎮di
= I
= 5 mA;
MOSFET
DS
= 0 V; T
D90
DS
DS
G
= 0 V
= 1 Ω
= 350 V; I
= 380 V;
T
F
VJ
VJ
C
C
= 37.5 A; V
F
= 25°C
= 25°C
= 25°C
= 125°C
/dt⎮≤ 100A/µs
D
(T
= 100 A
VJ
GS
= 25°C, unless otherwise specified)
= 0 V
min.
2.1
Characteristic Values
Maximum Ratings
100
500
240
110
typ.
0.9
30
50
20
30
10
600
±20
1.8
75
50
6
1
G
S
max.
0.22 K/W
200 nA
3.9
1.1
36 mΩ
50 µA
V/ns
D
S
mJ
nC
nC
nC
µA
ns
ns
ns
ns
V
V
A
A
V
V
J
miniBLOC, SOT-227 B
G = Gate
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
• miniBLOC package
• fast CoolMOS
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
- High power dissipation due to AlN
- International standard package SOT-227
- Easy screw assembly
3
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
- Low thermal resistance
600 V
rd
V
reduced EMI
ceramic substrate
inductive switching (UIS)
due to reduced chip thickness
generation
DSS
1)
CoolMOS
Infineon Technologies AG.
IXKN 75N60C
D = Drain
™ 1)
75 A
I
power MOSFET
™
D25
is a trademark of
G
36 mΩ Ω Ω Ω Ω
S
R
S = Source
DS(on)
D
20080523a
1 - 4
S
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IXKN75N60C Summary of contents
Page 1
... Ω 100 d(off (reverse conduction thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G S Maximum Ratings 600 ± /dt⎮≤ 100A/µ 25°C 1 25° Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... ISOL stg M mounting torque d terminal connection torque (M4) Symbol Conditions R with heatsink compound thCH Weight miniBLOC, SOT-227 B M4 screws (4x) supplied © 2008 IXYS All rights reserved Maximum Ratings 2500 V~ °C -40...+150 °C -40...+125 1.5 Nm 1.5 Nm Characteristic Values min. typ. max. 0.1 K/W ...
Page 3
... I - Amperes D Fig. 3 Typical normalized Fig. 5 Continuous drain current I © 2008 IXYS All rights reserved 4. 2 125º 25ºC J 280 320 360 = DS(on) D 100 120 140 160 ° IXKN 75N60C 240 210 ...
Page 4
... T = -40ºC J 120 25ºC 125ºC 100 120 I - Amperes D Fig. 11 Typical transconductance g © 2008 IXYS All rights reserved Fig. 8 Forward Safe Operating Area, I 200 180 C iss 160 140 120 C oss 100 C rss 100 ), MHz Fig. 10 Typ. forward characteristics of reverse diode K/W ...