IXFN56N90P IXYS, IXFN56N90P Datasheet - Page 4

MOSFET N-CH SOT-227B

IXFN56N90P

Manufacturer Part Number
IXFN56N90P
Description
MOSFET N-CH SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN56N90P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
135 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
6.5V @ 3mA
Gate Charge (qg) @ Vgs
375nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
135 mOhms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
900 V
Continuous Drain Current
56 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
375 nC
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
56
Rds(on), Max, Tj=25°c, (?)
0.145
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
375
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN56N90P
Manufacturer:
IXYS
Quantity:
13 064
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
10
0
0
0.3
4.5
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5.0
5
0.5
5.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
T
6.0
J
15
= 125ºC
V
GS
V
0.7
SD
V
- Volts
DS
- Volts
6.5
20
T
- Volts
J
= 125ºC
0.8
- 40ºC
25ºC
7.0
25
T
0.9
J
= 25ºC
7.5
30
1.0
C oss
C iss
C rss
8.0
35
1.1
1.2
40
8.5
0.001
0.01
90
80
70
60
50
40
30
20
10
10
0.1
0
9
8
7
6
5
4
3
2
1
0
0.0001
1
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 28A
= 10mA
10
= 450V
50
0.001
20
100
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
Pulse Width - Seconds
150
Q
I
0.01
D
G
- Amperes
- NanoCoulombs
40
200
IXFN56N90P
50
0.1
250
T
60
J
= - 40ºC
300
70
25ºC
125ºC
IXYS REF: F_56N90P(99)10-24-08
1
350
80
400
90
10