IXFN60N60 IXYS, IXFN60N60 Datasheet
IXFN60N60
Manufacturer Part Number
IXFN60N60
Description
MOSFET N-CH 600V 60A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN60N60.pdf
(2 pages)
Specifications of IXFN60N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
15000
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN60N60
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN60N60
Manufacturer:
DIODES
Quantity:
10 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
I
I
R
D25
DM
AR
DSS
GSS
J
JM
stg
DGR
AR
AS
D
DSS
GS
GSM
ISOL
DSS
GH(th)
d
DS(on)
I
S
T
T
T
T
T
£ I
Test Conditions
T
T
Continuous
Transient
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
DM
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
, di/dt £ 100 A/ms, V
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
GS
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
G
, V
= 0.5 • I
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
DD
= 1 MW
£ V
T
T
DSS
J
J
(T
= 25°C
= 125°C
,
JM
rr
J
= 25°C, unless otherwise specified)
min.
600
Characteristic Values
2
IXFN 60N60
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
600
600
±20
±30
240
700
150
60
60
64
30
4
5
max.
±200
100
4.5
75
2
D
S
V/ns
mW
mJ
mA
V~
V~
nA
mA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B (IXFN)
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
V
I
R
D25
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
DS (on)
HDMOS
= 600 V
=
=
G
D = Drain
TAB = Drain
60 A
75 mW
S
TM
process
D
98593B (7/00)
S
1 - 2
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IXFN60N60 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFN 60N60 Maximum Ratings 600 = 1 MW 600 GS ±20 ±30 60 240 £ ...
Page 2
... D25 190 0.18 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V R 1.5 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN 60N60 miniBLOC, SOT-227 screws (4x) supplied ns Dim ...