IXFN80N50 IXYS, IXFN80N50 Datasheet

MOSFET N-CH 500V 80A SOT-227B

IXFN80N50

Manufacturer Part Number
IXFN80N50
Description
MOSFET N-CH 500V 80A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN80N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
9890pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Forward Transconductance Gfs (max / Min)
70 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
780 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
9890
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN80N50
Manufacturer:
IXYS
Quantity:
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Manufacturer:
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Part Number:
IXFN80N50Q2
Manufacturer:
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Part Number:
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HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
S
ISOL
C
C
C
C
C
C
J
J
J
GS
GS
GS
DS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 • I
G
= 2 Ω
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
rr
DSS
JM
,
IXFN 80N50
min.
500
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
500
500
±20
±30
780
150
320
80
64
30
80
6
5
max.
±200
100
4.5
55
2
D
S
V/ns
mΩ
mA
mJ
°C
°C
°C
V~
V~
nA
µA
W
V
V
A
A
A
V
V
V
V
g
J
V
I
R
t
G = Gate
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
D25
rr
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
DS (on)
HDMOS
G
≤ ≤ ≤ ≤ ≤ 250 ns
= 500
=
=
D = Drain
S
TM
DS98538E(12/03)
process
D
80
55 mΩ Ω Ω Ω Ω
S
V
A

Related parts for IXFN80N50

IXFN80N50 Summary of contents

Page 1

... ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFN 80N50 Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 80 320 ≤ DSS 780 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. ...

Page 2

... Pulse test, t < 300 ms, duty cycle d < 30A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 50 70 ...

Page 3

... T - Degrees C C Fig. 5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 100 Fig. 2. High Temperature Output Characteristics 2.8 2.5 2.2 1.9 1.6 1.3 1 vs. Drain Current IXFN80N50 - PG 1 IXFN 80N50 125 Volts 10V 80A D I =40A 100 ...

Page 4

... V - Volts SD Fig. 9. Source-to-Drain Voltage Drop 1.000 0.100 0.010 0.001 Fig.10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. 30000 10000 Fig. 8 Capacitance Curves 1.0 1 Pulse Width - Seconds IXFN 80N50 Ciss Coss 1000 ...

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