APTM10DAM02G Microsemi Power Products Group, APTM10DAM02G Datasheet

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APTM10DAM02G

Manufacturer Part Number
APTM10DAM02G
Description
MOSFET N-CH 100V 495A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10DAM02G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
495A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM10DAM02G
Manufacturer:
Microsemi Corporation
Quantity:
450
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
S2
G2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
Boost chopper
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G2
S2
0/VBUS
CR1
Q2
Parameter
VBUS
0/VBUS
OUT
OUT
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 495A @ Tc = 25°C
= 25°C
= 80°C
= 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Power MOS V
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 100V
= 2.25mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
APTM10DAM02G
Symmetrical design
M5 power connectors
Max ratings
DSon
1900
1250
3000
100
495
370
±30
100
2.5
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 - 6

APTM10DAM02G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10DAM02G V = 100V DSS R = 2.25mΩ typ @ Tj = 25°C DSon I = 495A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM10DAM02G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125° 0V,V = 80V j GS ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM10DAM02G Transistor Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.1 °C/W ...

Page 4

... Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 200A GS 1.1 1 0.9 0.8 0 100 200 300 I , Drain Current (A) D APTM10DAM02G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 480 V DS 400 250µs pulse test @ < 0.5 duty cycle 320 240 7V 160 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 Crss 1000 Drain to Source Voltage (V) DS www.microsemi.com APTM10DAM02G ON resistance vs Temperature 2.5 V =10V 200A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 10000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10DAM02G 300 250 ...

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