APTM10SKM02G Microsemi Power Products Group, APTM10SKM02G Datasheet - Page 6

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APTM10SKM02G

Manufacturer Part Number
APTM10SKM02G
Description
MOSFET N-CH 100V 495A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10SKM02G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
495A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM10SKM02G
Manufacturer:
Microsemi Corporation
Quantity:
332
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
600
500
400
300
200
100
60
50
40
30
20
10
0
0
5
4
3
2
1
0
100
50
50
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
V
R
T
L=100µH
DS
J
C
G
DS
G
J
=125°C
J
=75°C
=125°C
DS
G
=1.25Ω
=1.25Ω
=125°C
=66V
=66V
=1.25Ω
Switching Energy vs Current
150
=66V
150
200
Delay Times vs Current
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
250
250
switching
E
Hard
off
300
350
350
ZVS
450
450
E
t
400
d(off)
off
t
d(on)
ZCS
550
550
E
on
650
650
500
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1000
100
300
250
200
150
100
10
50
9
8
7
6
5
4
3
2
1
1
0
Switching Energy vs Gate Resistance
0.3
0
50
APTM10SKM02G
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
D
J
DS
=400A
=125°C
V
=66V
2.5
SD
Rise and Fall times vs Current
0.5
150
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
T
I
J
D
=150°C
0.7
250
, Drain Current (A)
5
7.5
T
0.9
350
J
=25°C
E
off
10
1.1
450
V
R
T
L=100µH
t
r
t
E
DS
J
G
12.5
f
=125°C
1.3
=1.25Ω
550
on
=66V
650
1.5
15
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