IXTN200N10T IXYS, IXTN200N10T Datasheet - Page 2

• Manufacturer Part Number: IXTN200N10T
• Description: MOSFET N-CH 100V 200A SOT-227
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTN200N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.30
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
GS
GS
DS
GS
G
GS
GS
= 100A, -di/dt = 100A/μs, V
= 50A, V
PRELIMINARY TECHNICAL INFORMATION
= 3.3Ω (External)
= 10V, V
= 0V
= 0V
= 10V, I
= 10V, V
= 0V, V
GS
D
DS
DS
= 0V, Note 1
DS
= 60A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
R
= 50A
= 25A
= 50V
5,049,961
5,063,307
5,187,117
(T
JM
J
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Min.
Min.
60
Characteristic Values
Characteristic Values
9400
1087
Typ.
0.05
Typ.
205
6,162,665
6,259,123 B1
6,306,728 B1
140
152
5.4
76
96
35
31
45
34
47
47
0.27
Max.
200
500
1.0
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXTN200N10T
7,005,734 B2
7,063,975 B2
7,157,338B2