IXTN200N10T IXYS, IXTN200N10T Datasheet - Page 5

• Manufacturer Part Number: IXTN200N10T
• Description: MOSFET N-CH 100V 200A SOT-227
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTN200N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.30
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
220
200
180
160
140
120
100
38
37
36
35
34
33
32
31
30
33
32
31
30
29
28
27
26
25
24
23
22
80
60
40
20
0
24
25
2
26
t
T
V
Switching Times vs. Gate Resistance
r
J
DS
35
I
= 125ºC, V
4
Switching Times vs. Drain Current
D
Rise Time vs. Junction Temperature
28
= 50V
= 25A
45
30
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
6
Fig. 13. Resistive Turn-on
T
T
T
T
t
J
J
d(on)
J
J
32
GS
= 125ºC
= 25ºC
= 25ºC
= 125ºC
I
55
T
8
D
= 10V
I
J
D
= 50A
- - - -
34
R
- Degrees Centigrade
- Amperes
G
I
65
D
10
- Ohms
36
= 50A
38
75
12
t
R
V
f
DS
G
40
= 3.3Ω, V
= 50V
85
14
42
95
44
t
16
d(off)
GS
I
R
V
V
D
G
GS
DS
= 10V
= 25A
46
= 3.3Ω
105
= 10V
= 50V
- - - -
18
48
115
20
50
85
80
75
70
65
60
55
50
45
40
35
30
80
75
70
65
60
55
50
45
40
125
200
180
160
140
120
100
42
40
38
36
34
32
30
28
80
60
40
20
0
25
34
33
32
31
30
29
28
27
26
25
24
23
22
2
Switching Times vs. Junction Temperature
24
t
R
V
t
T
V
Switching Times vs. Gate Resistance
35
f
DS
G
f
J
DS
4
26
= 125ºC, V
R
V
V
= 3.3Ω, V
= 50V
= 50V
G
GS
DS
= 3.3Ω
45
= 10V
= 50V
28
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
6
Rise Time vs. Drain Current
T
t
Fig. 14. Resistive Turn-on
30
d(off)
GS
t
J
55
d(off)
GS
I
- Degrees Centigrade
D
= 10V
8
= 10V
= 25A
32
- - - -
- - - -
R
65
G
I
10
34
D
- Ohms
- Amperes
I
75
D
36
= 25A
12
85
IXTN200N10T
38
I
D
14
= 50A
T
40
J
95
T
J
= 125ºC
I
= 25ºC
D
42
16
= 50A
105
IXYS REF: T_200N10T(6V)9-30-08-D
44
18
115
46
20
125
48
300
275
250
225
200
175
150
125
100
75
50
75
70
65
60
55
50
45
40
50