IXFN102N30P IXYS, IXFN102N30P Datasheet
IXFN102N30P
Manufacturer Part Number
IXFN102N30P
Description
MOSFET N-CH 300V 88A SOT227B
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFN102N30P.pdf
(2 pages)
Specifications of IXFN102N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
224nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
88 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
86
Rds(on), Max, Tj=25°c, (?)
0.033
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
224
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
570
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN102N30P
Manufacturer:
IXYS
Quantity:
200
Part Number:
IXFN102N30P
Quantity:
126
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
D25
L
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
S
ISOL
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
≤ 1 mA
= 0 V, I
= V
= ± 20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250 µA
G
= 0.5 I
, V
= 4 Ω
DS
= 0
D25,
GS
Note 1
= 1 MΩ
Preliminary Technical Information
DD
T
J
≤ V
= 125° C
t = 1 s
t = 1 min
DSS
IXFN 102N30P
JM
,
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
2500
3000
± 20
± 30
300
300
100
250
600
150
300
88
88
60
10
30
± 200
5
250
Max.
5.0
25
33
V/ns
m Ω
mJ
V~
V~
nA
µA
µA
°C
°C
°C
°C
W
g
V
V
V
V
A
A
A
A
V
V
J
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•
•
•
l
l
l
Advantages
l
l
l
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
= 300
=
≤ ≤ ≤ ≤ ≤ 200 ns
S
D = Drain
D
33 mΩ Ω Ω Ω Ω
88
DS99248E(05/06)
S
A
V
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IXFN102N30P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25, © 2006 IXYS All rights reserved Preliminary Technical Information IXFN 102N30P Maximum Ratings 300 = 1 MΩ 300 GS ± 20 ± 100 250 ≤ DSS 600 -55 ... +150 150 -55 ... +150 300 min 2500 3000 1 Nm/lb.in. ...
Page 2
... DSS D D25 110 0.21 °C/W 0.05 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ. 0.8 6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN102N30P SOT-227B Outline Max °C/W Max. 102 A 250 A 1.5 V 200 ns µC A 6,404,065 B1 6,683,344 ...