IXFN100N25 IXYS, IXFN100N25 Datasheet

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IXFN100N25

Manufacturer Part Number
IXFN100N25
Description
MOSFET N-CH 250V 100A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN100N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.027 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.027
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
300
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN100N25
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
DM
AR
D25
J
JM
stg
L
DSS
GS(th)
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
ISOL
d
Note 1
V
V
Test Conditions
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
S
ISOL
GS
GS
DS
C
C
C
C
C
C
GS
J
J
J
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= 10 V, I
£ 1 mA
= ±20 V, V
= V
= 0 V
DM
GS
TM
, di/dt £ 100 A/ms, V
DSS
, I
D
D
= 3mA
= 8mA
D
= 0.5 • I
G
DS
= 2 W
= 0
t = 1 min
t = 1 s
D25
GS
= 1 MW
DD
£ V
T
T
(T
J
J
rr
J
DSS
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
Advanced Technical Information
IXFN 100N25
min.
250
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
250
250
±20
±30
100
400
100
600
150
64
30
max.
3
5
-
±200 nA
100 mA
27 mW
2 mA
4 V
V/ns
mJ
V~
V~
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
g
J
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
E153432
DSS
DS(on)
£ 250 ns
DS (on)
HDMOS
G
= 250 V
= 100 A
=
D = Drain
TAB = Drain
S
TM
27 mW
process
D
98625A (6/99)
S
1 - 2

Related parts for IXFN100N25

IXFN100N25 Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • I DS(on Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXFN 100N25 rr Maximum Ratings 250 = 1 MW 250 GS ±20 ±30 100 400 JM 100 64 £ DSS 600 -55 ...

Page 2

... D D25 160 0.22 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V 1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN 100N25 miniBLOC, SOT-227 screws (4x) supplied ns Dim. ...

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