STE140NF20D STMicroelectronics, STE140NF20D Datasheet - Page 3

• Manufacturer Part Number: STE140NF20D
• Description: MOSFET N-CH 200V 140A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE140NF20D

• Package / Case: ISOTOP
• Power - Max: 500W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 338nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 140A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 70A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STE140NF20D
1
Electrical ratings
Table 2.
1. The value is rated according R
2. Pulse width limited by safe operating area
3. Pulse width limited by Tjmax
4. Strating Tj = 25 °C, I
5. I
Table 3.
Symbol
P
Symbol
R
dv/dt
R
E
I
I
SD
I
TOT
AR
V
DM
V
I
thj-case
V
T
AS
thj-amb
D
D
T
ISO
GS
DS
stg
(1)
(1)
J
(2)
(3)
(4)
(5)
≤ 30 A, di/dt ≤ 1000 A/µs, V
(2)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Peak diode recovery voltage slope
Insulation winthstand voltage (AC-RMS)
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case
Thermal resistance junction-ambient
D
= I
AR
, V
DD
thj-pcb
= 50 V
Doc ID 15299 Rev 3
C
DD
Parameter
= 25 °C
Parameter
GS
≤ 80% V
= 0)
C
C
=100 °C
= 25 °C
(BR)DSS
- 55 to 150
Value
Value
2500
± 20
0.25
200
140
560
500
140
800
88
25
40
Electrical ratings
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
W
V
V
A
A
A
A
V
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