STE140NF20D STMicroelectronics, STE140NF20D Datasheet - Page 5
STE140NF20D
Manufacturer Part Number
STE140NF20D
Description
MOSFET N-CH 200V 140A ISOTOP
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STE140NF20D.pdf
(13 pages)
Specifications of STE140NF20D
Package / Case
ISOTOP
Power - Max
500W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
338nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
140A
Drain To Source Voltage (vdss)
200V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 70A, 10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE140NF20D
Manufacturer:
ST
Quantity:
20 000
STE140NF20D
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15299 Rev 3
V
R
(see Figure 15)
I
I
di/dt = 100 A/µs,
V
I
di/dt = 100 A/µs,
V
DD
SD
SD
SD
G
DD
DD
=4.7 Ω, V
Test conditions
Test conditions
= 140 A, V
= 140 A,
= 140 A,
= 100 V, I
= 60 V
= 60 V, Tj=150 °C
GS
D
GS
= 70 A,
=10 V
=0
Electrical characteristics
Min.
Min.
-
-
-
-
-
-
Typ.
Typ.
190
257
232
218
283
250
1.4
2.4
14
18
Max.
Max.
140
560
1.5
-
Unit
Unit
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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