VMO1200-01F IXYS, VMO1200-01F Datasheet - Page 4

MOSFET N-CH 100V 1245A Y3-LI

VMO1200-01F

Manufacturer Part Number
VMO1200-01F
Description
MOSFET N-CH 100V 1245A Y3-LI
Manufacturer
IXYS
Series
HiPerFET™r
Type
Single Switch MOSFETs Moduler
Datasheet

Specifications of VMO1200-01F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.35 mOhm @ 932A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1245A
Vgs(th) (max) @ Id
4V @ 64mA
Gate Charge (qg) @ Vgs
2520nC @ 10V
Mounting Type
Chassis Mount
Package / Case
Y3-Li
Mounting Style
Screw
Product
Power Semiconductor Modules
Typical Delay Time
360 ns
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
1220
Id80, Tc = 80°c, (a)
970
Rds(on), Max, Tj = 25°c, (mohms)
1.25
Tf, Typ, (ns)
1020
Tr, Typ, (ns)
1620
Rthjc, Max, (k/w)
0.053
Package Style
Y3-Li (w/o terminal 1, low inductance)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
© 2010 IXYS All rights reserved
V
normal.
[A]
R
normal.
I
D
DSS
DS(on)
1000
800
600
400
200
1.2
1.1
1.0
0.9
0.8
2.0
1.6
1.2
0.8
0.4
0.0
0
-40
-50
0
Fig. 1 Drain source breakdown voltage
Fig. 3 Typical output characteristic
Fig. 5 Typ. drain source on-state resistance
10 V
15 V
9 V
-25
I
DSS
V
R
0
1
DSS
DS(on)
= 6 mA
0
versus junction temperature T
versus junction temperature T
8 V
25
R
normalized
40
DS(on)
2
T
V
T
VJ
DS
VJ
50
[°C]
[V]
[°C]
80
3
75
T
100 125 150
J
120
= 25°C
4
V
7 V
GS
R
= 6 V
DS(on)
160
VJ
5
4.0
3.2
2.4
1.6
0.8
0.0
VJ
R
[mΩ]
DS(on)
R
[mΩ]
[A]
I
[A]
DS(on)
I
D
D
1000
1000
800
600
400
200
800
600
400
200
0
0
8
7
6
5
4
3
2
1
0
0
0
0
Fig. 4 Typical output characteristic
Fig. 2 Typical transfer characteristic
Fig. 5 Typ. drain source on-state resistance
10 V
15 V
9 V
V
200
R
2
DS
1
DS(on)
= 6 V
T
J
= 125°C
versus I
400
4
2
VMO 1200-01F
V
V
I
GS
DS
D
8 V
D
7 V
[A]
[V]
[V]
600
6
3
T
T
10 V
15 V
J
J
8 V
9 V
T
= 25°C
= 125°C
VJ
800
8
4
= 125°C
V
GS
= 5 V
20100614b
7 V
6 V
1000
10
4 - 6
5

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