FSB52006S Fairchild Semiconductor, FSB52006S Datasheet

MODULE SPM SMART PWR SPM23-BA

FSB52006S

Manufacturer Part Number
FSB52006S
Description
MODULE SPM SMART PWR SPM23-BA
Manufacturer
Fairchild Semiconductor
Series
SPM™r
Type
FETr
Datasheet

Specifications of FSB52006S

Configuration
3 Phase
Current
2.6A
Voltage
60V
Voltage - Isolation
1500Vrms
Package / Case
SPM23BA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FSB52006S Rev. A
FSB52006S
Smart Power Module (SPM)
Features
• 60V, R
• 3 divided negative dc-link terminals for inverter current sens-
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level 3
Absolute Maximum Ratings
Symbol
including high voltage integrated circuit (HVIC)
ing applications
T
I
R
V
V
V
I
V
D100
I
V
P
D25
T
STG
DP
θJC
ISO
CC
PN
BS
IN
D
J
DS(ON).MAX
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
=80mΩ @ 25°C 3-phase FRFET inverter
Parameter
T
T
T
T
Applied between V
Applied between V
V
Applied between IN and COM
Each FRFET under inverter operating con-
dition (Note 1)
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
C
C
C
C
B(W)
= 25°C
= 100°C
= 25°C, PW < 100μs
= 25°C, Each FRFET
-V
S(W)
1
General Description
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB52006S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB52006S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
FSB52006S is a tiny smart power module (SPM) based on
Conditions
CC
B(U)
and COM
-V
S(U)
, V
B(V)
-V
S(V)
,
-0.3 ~ VCC+0.3
-20 ~ 125
-50 ~ 150
Rating
1500
2.6
1.3
9.2
60
20
20
11
5
February 2008
www.fairchildsemi.com
Units
°C/W
V
°C
°C
W
V
A
A
A
V
V
V
rms

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FSB52006S Summary of contents

Page 1

... ISO ©2008 Fairchild Semiconductor Corporation FSB52006S Rev. A General Description FSB52006S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB52006S provides low electromagnetic interference (EMI) characteristics with optimized switching speed ...

Page 2

... Note: Source terminal of each MOSFET is not connected to supply ground or bias voltage ground inside SPM. External connections should be made as indicated in Figure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB52006S Rev. A Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving ...

Page 3

... The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir- cuit that is same as the switching test circuit. Package Marking & Ordering Information Device Marking Device FSB52006S FSB52006S FSB52006S Rev 25° =15V Unless Otherwise Specified ...

Page 4

... Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80mm 3.80mm Note: Attach the thermocouple on top of the heatsink-side of SPM (between SPM and heatsink if applied) to get the correct temperature measurement. FSB52006S Rev. A Conditions Applied between P and N Applied between V and COM CC Applied between V ...

Page 5

... V IN 100 (a) Turn- Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB52006S Rev 120 Figure 4. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ...

Page 6

... 15-V Supply FSB52006S Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ...

Page 7

... Detailed Package Outline Drawings (1.165) 15*1.778=26.67 13.34 ±0.30 #1 #17 12.23 ±0.30 2x3.90=7.80 (2.275) 0.60 ±0.10 Max 1.00 GAGE PLANE SEATING PLANE FSB52006S Rev. A Max 1.00 0.60 ±0.10 ±0.30 13.34 ±0.30 #1 #16 1.30 #23 13.13 ±0.30 7.80 29.00 ±0.20 LAND PATTERN RECOMMENDATIONS ±0.30 4x3.90=15.60 ± ...

Page 8

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FSB52006S Rev. A GlobalOptoisolator™ Power247 GTO™ PowerEdge™ HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ...

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