FSAM30SH60A Fairchild Semiconductor, FSAM30SH60A Datasheet - Page 6

• Manufacturer Part Number: FSAM30SH60A
• Description: SMART POWER MODULE 30A SPM32-AA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSAM30SH60A

• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM32AA
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 62 W
• Power Dissipation: 62 W
• Mounting Style: SMD/SMT
• Operating Temperature (max): 125C
• Operating Temperature (min): -20C
• Pin Count: 32
• Mounting: Through Hole
• Package Type: SPM32-AA
• Case Length: 60mm
• Case Height: 7.2mm
• Screening Level: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FSAM30SH60A_NL; FSAM30SH60A_NL

©2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Thermal Resistance
Note:
2. For the measurement point of case temperature(T
3. The thickness of thermal grease should not be more than 100um.
Electrical Characteristics
Inverter Part
Note:
4. t
Junction to Case Thermal
Resistance
Contact Thermal
Resistance
Collector - Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Times
Collector - Emitter
Leakage Current
internally. For the detailed information, please see Fig. 4.
ON
and t
OFF
Item
Item
include the propagation delay time of the internal drive IC. t
V
Symbol
t
t
CE(SAT)
C(OFF)
C(ON)
t
I
V
t
OFF
CES
ON
t
Symbol
FM
rr
R
R
R
th(j-c)Q
th(j-c)F
th(c-f)
V
V
V
V
I
V
(High, Low-side)
(Note 4)
V
C
CC
IN
IN
PN
IN
CE
C
= 30A, T
), please refer to Fig. 2.
Each IGBT under Inverter Operating Condition
Each FWDi under Inverter Operating Condition
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
= 0V
= 5V
= 5V ↔ 0V, Inductive Load
= 300V, V
= V
= V
(T
J
CES
BS
= 25°C, Unless Otherwise Specified)
J
= 15V
, T
= 25°C
CC
J
= 25°C
= V
C(ON)
Condition
BS
and t
Condition
= 15V
C(OFF)
I
I
C
C
are the switching time of IGBT itself under the given gate driving condition
= 30A, T
= 30A, T
J
J
= 25°C
= 25°C
Min.
-
-
-
-
-
-
-
-
Min. Typ.
-
-
-
Typ.
0.39
0.85
0.24
0.13
0.2
-
-
-
-
-
-
Max.
0.06
Max.
2.0
3.2
250
2.5
2.6
-
-
-
-
-
Rev. E, August 2003
°C/W
°C/W
°C/W
Unit
Unit
µA
us
us
us
us
us
V
V