VHF15-08IO5 IXYS, VHF15-08IO5 Datasheet

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VHF15-08IO5

Manufacturer Part Number
VHF15-08IO5
Description
RECT BRIDGE 1PH 800V PWS-E-1
Manufacturer
IXYS
Datasheet

Specifications of VHF15-08IO5

Structure
Bridge, Single Phase - SCRs/Diodes (Layout 1)
Number Of Scrs, Diodes
2 SCRs, 2 Diodes
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
65mA
Current - On State (it (rms)) (max)
15A
Current - Non Rep. Surge 50, 60hz (itsm)
190A, 210A
Current - Hold (ih) (max)
100mA
Mounting Type
Chassis Mount
Package / Case
PWS-E1
Vrrm, (v)
800
Vvrms, (v)
250
Idavm, (a)
15
@ Th, (°c)
85
@ Tc, (°c)
-
Ifsm, 10 Ms, Tvj = 45°c, (a)
190
Vt0, (v)
1.00
Rt, (mohms)
40
Tvjm, (°c)
125
Rthjc, Per Chip, (k/w)
2.40
Rthjh, Per Chip, (k/w)
3.00
Package Style
FO-F-A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (av)) (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VHF15-08IO5
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
VHF15-08IO5
Quantity:
60
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
Symbol
I
I
I
I
I
(di/dt)
(dv/dt)
V
P
P
T
T
T
V
M
Weight
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1300
1500
1700
V
V
dAV
dAVM
FRMS
FSM
2
t
VJ
VJM
stg
RGM
GM
GAVM
ISOL
900
d
V
RSM
DSM
for resistive load
, I
, I
TSM
TRMS
cr
cr
1200
1400
1600
V
V
800
RRM
DRM
V
Test Conditions
T
module
per leg
T
V
T
V
T
V
T
V
T
f =50 Hz, t
V
I
di
T
R
T
I
50/60 Hz, RMS
I
Mounting torque
G
T
ISOL
K
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
G
GK
= I
= 0.3 A,
= 85°C, module
/dt = 0.3 A/ms
= 0 V
= 0 V
= 0 V
= 0 V
= 2/3 V
= 45°C;
= T
= 45°C
= T
= 125°C
= T
= T
= ¥; method 1 (linear voltage rise)
£ 1 mA
TAVM
VJM
VJM
VJM
VJM
; V
P
DRM
Type
VHF 15-08io5
VHF 15-12io5
VHF 15-14io5
VHF 15-16io5
=200 ms
DR
= 2/3 V
DRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
t
t
t
t = 1 min
t = 1 s
(M5)
(10-32 UNF)
p
p
p
=
= 500 ms
=
10 ms
30 ms
T
= 50 A
T
= 1/2 • I
6
4
dAV
-40...+125
-40...+125
Maximum Ratings
£
£
£
18-22
2-2.5
1000
3000
3600
1
190
210
170
190
160
180
140
145
150
500
125
0.5
15
21
15
10
10
50
5
1
3
A/ms
A/ms
V/ms
lb.in.
Nm
A
A
A
A
V~
V~
°C
°C
°C
W
W
W
W
A
A
A
A
A
A
A
V
g
2
2
2
2
s
s
s
s
2
8
I
V
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
dAVM
Package with DCB ceramic base
plate
Isolation voltage 3600 V~
Planar passivated chips
1/4" fast-on terminals
UL registered E 72873
Supply for DC power equipment
DC motor control
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
4
= 21 A
= 800-1600 V
1
2
3
8
VHF 15
6
1 - 3

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VHF15-08IO5 Summary of contents

Page 1

... ISOL £ ISOL M Mounting torque d Weight Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved Maximum Ratings (50 Hz), sine 190 ...

Page 2

... DC current thJC per module R per thyristor (diode); DC current thJK per module d Creepage distance on surface S d Creepage distance in air A a Max. allowable acceleration © 2000 IXYS All rights reserved Characteristic Values £ VJM £ 25°C VJ £ = 125°C) VJ £ ...

Page 3

... Fig. 3 Surge overload current per chip I : Crest value, t: duration FSM Fig. 6 Power dissipation versus direct output current and ambient temperature Fig. 7 Transient thermal impedance junction to heatsink per chip © 2000 IXYS All rights reserved 2 Fig versus time (1-10 ms) per chip VHF 15 Fig ...

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