FDME1023PZT Fairchild Semiconductor, FDME1023PZT Datasheet

MOSFET P-CH 20V 2.6A 6-MICROFET

FDME1023PZT

Manufacturer Part Number
FDME1023PZT
Description
MOSFET P-CH 20V 2.6A 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDME1023PZT

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
142 mOhm @ 2.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
405pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
95 mOhms
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 2.3 A
Power Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
7 S
Gate Charge Qg
5.5 nC
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1
FDME1023PZT
Dual P-Channel PowerTrench
-20 V, -2.6 A, 142 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Low profile:
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
Pin 1
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
2T
S1
= 142 mΩ at V
= 213 mΩ at V
= 331 mΩ at V
= 530 mΩ at V
BOTTOM
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
G1
0.55 mm maximum in the new package
D2
D1
GS
GS
GS
GS
FDME1023PZT
MicroFET 1.6x1.6 Thin
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
D2
Device
-Pulsed
D1
G2
D
D
D
D
= -2.3 A
= -1.8 A
= -1.5 A
= -1.2 A
T
S2
A
= 25 °C unless otherwise noted
MicroFET 1.6x1.6 Thin
Parameter
®
Package
MOSFET
T
T
T
A
A
A
= 25 °C
= 25 °C
= 25 °C
1
TOP
General Description
This device is designed specifically as a single package solution
for the battery charges switch in cellular handset and other
ultra-portable
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
Load Switch
Battery Charging
Battery Disconnect Switch
Reel Size
7 ’’
applications.
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
S1 1
G1
D2
2
3
Tape Width
It
8 mm
features
-55 to +150
Ratings
-2.6
195
-20
1.4
0.6
±8
90
-6
two
July 2010
www.fairchildsemi.com
5000 units
Quantity
independent
6
5
4
Units
°C/W
°C
D1
G2
S2
W
V
V
A

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FDME1023PZT Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient (Single Operation) θJA Package Marking and Ordering Information Device Marking Device 2T FDME1023PZT ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev.C1 ® MOSFET General Description This device is designed specifically as a single package solution = -2 for the battery charges switch in cellular handset and other = -1 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev. °C unless otherwise noted J Test Conditions = -250 μ ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev. °C unless otherwise noted J μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 2 100 125 150 - 0.001 1.5 2.0 ...

Page 4

... C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 1000 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev. °C unless otherwise noted - - 100 100 PULSE WIDTH (s) 4 1000 100 MHz V ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev. °C unless otherwise noted J SINGLE PULSE 195 C/W θ RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDME1023PZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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