FDPF18N20FT Fairchild Semiconductor, FDPF18N20FT Datasheet

MOSFET N-CH 200V 18A TO-220F-3

FDPF18N20FT

Manufacturer Part Number
FDPF18N20FT
Description
MOSFET N-CH 200V 18A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF18N20FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Forward Transconductance Gfs (max / Min)
13.6 S
Drain-source Breakdown Voltage
200 V
Continuous Drain Current
18 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP18N20F / FDPF18N20FT
N-Channel MOSFET
200V, 18A, 0.14Ω
Features
• R
• Low gate charge ( Typ. 20nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.12Ω ( Typ.)@ V
( Typ. 24pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G D S
GS
TO-220
FDP Series
= 10V, I
D
= 9A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
FDPF Series
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
FDP18N20F FDPF18N20FT
FDP18N20F FDPF18N20FT
G
10.8
0.83
62.5
100
1.2
0.5
18
72
-55 to +150
200
±30
324
300
4.5
18
10
S
D
September 2009
10.8*
0.33
62.5
18*
72*
UniFET
3.0
41
-
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF18N20FT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. A Description = 9A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 18A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP18N20F / FDPF18N20FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... V GS 0.15 0. Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 1000 500 0 0 Drain-Source Voltage [V] DS FDP18N20F / FDPF18N20FT Rev. A Figure 2. Transfer Characteristics *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage = 10V V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 10-1. Transient Thermal Response Curve - FDP18N20F 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDP18N20F / FDPF18N20FT Rev. A (Continued) Figure 8-1. Maximum Safe Operating Area *Notes µ 250 A D 100 150 200 o C] µ µ ...

Page 5

... Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT 2 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP18N20F / FDPF18N20FT Rev Rectangular Pulse Duration [sec *Notes (t) = 3.0 C/W Max. θ Duty Factor (t) θ www.fairchildsemi.com ...

Page 6

... FDP18N20F / FDPF18N20FT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP18N20F / FDPF18N20FT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP18N20F / FDPF18N20FT Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 4000V FDP18N20F / FDPF18N20FT Rev. A TO-220F Potted 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP18N20F / FDPF18N20FT Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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