FDPF5N50UT Fairchild Semiconductor, FDPF5N50UT Datasheet

MOSFET N-CH 500V TO-220F-3

FDPF5N50UT

Manufacturer Part Number
FDPF5N50UT
Description
MOSFET N-CH 500V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FDPF5N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
4 A
Power Dissipation
28 W
Forward Transconductance Gfs (max / Min)
4.8 S
Gate Charge Qg
11 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF5N50UT
Manufacturer:
Fairchi/ON
Quantity:
17 404
©2009 Fairchild Semiconductor Corporation
FDP5N50U / FDPF5N50UT Rev. A-1
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP5N50U / FDPF5N50UT
N-Channel MOSFET, FRFET
500V, 4A, 2.0
Features
• R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
G D S
= 1.65 ( Typ.)@ V
( Typ. 5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 2A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
(potted)
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP5N50U
FDP5N50U
62.5
0.67
1.4
0.5
2.4
16
85
4
-55 to +150
Ultra FRFET
S
D
500
±30
216
300
8.5
4.5
4
FDPF5N50UT
FDPF5N50UT
November2009
62.5
4.5
0.22
2.4*
16*
28
-
4*
www.fairchildsemi.com
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
tm
C
C
o
C
TM

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FDPF5N50UT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FDP5N50U / FDPF5N50UT Rev. A-1 Description = 2A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting 4A, di/dt 200A/s, V  Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50U / FDPF5N50UT Rev. A unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

Page 3

... GS 1.8 1 Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss = oss = rss = C gd 800 600 400 200 0 0 Drain-Source Voltage [V] DS FDP5N50U / FDPF5N50UT Rev. A-1 Figure 2. Transfer Characteristics 10 1 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP5N50U 3 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP5N50U / FDPF5N50UT Rev. A-1 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes  250 A D 0.01 75 125 175 Figure 10. Maximum Drain Current  ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF5N50UT 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.003 -5 10 FDP5N50U / FDPF5N50UT Rev. A-1 (Continued Rectangular Pulse Duration [sec *Notes (t) = 4.5 C/W Max.  Duty Factor (t)  www.fairchildsemi.com ...

Page 6

... FDP5N50U / FDPF5N50UT Rev. A-1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP5N50U / FDPF5N50UT Rev. A-1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP5N50U / FDPF5N50UT Rev. A-1 TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP5N50U / FDPF5N50UT Rev. A-1 (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50U / FDPF5N50UT Rev. A-1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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