FDPF5N50UT Fairchild Semiconductor, FDPF5N50UT Datasheet - Page 3

MOSFET N-CH 500V TO-220F-3

FDPF5N50UT

Manufacturer Part Number
FDPF5N50UT
Description
MOSFET N-CH 500V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FDPF5N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
4 A
Power Dissipation
28 W
Forward Transconductance Gfs (max / Min)
4.8 S
Gate Charge Qg
11 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF5N50UT
Manufacturer:
Fairchi/ON
Quantity:
17 404
Part Number:
FDPF5N50UT
Manufacturer:
FAIRCHILD
Quantity:
8 000
FDP5N50U / FDPF5N50UT Rev. A-1
Typical Performance Characteristics
1000
0.02
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
800
600
400
200
0.1
2.6
2.2
1.8
1.4
Figure 1. On-Region Characteristics
10
1
0
0.1
0.1
0
V
GS
=
10.0V
15.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
V
Drain Current and Gate Voltage
DS
DS
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
6
V
GS
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
1
= 10V
*Notes:
V
GS
1. 250
2. T
C
C
*Note: T
C
= 20V
12
iss
oss
C
rss
= 25
(
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
C
10
10
J
= 25
GS
= 0V
o
C
)
30
30
18
3
0.1
Figure 2. Transfer Characteristics
10
Figure 4. Body Diode Forward Voltage
30
10
Figure 6. Gate Charge Characteristics
1
10
1
8
6
4
2
0
0.4
4
0
V
SD
, Body Diode Forward Voltage [V]
V
Variation vs. Source Current
and Temperature
5
GS
Q
g
150
,Gate-Source Voltage[V]
, Total Gate Charge [nC]
150
1.0
4
o
C
V
V
V
o
C
DS
DS
DS
= 100V
= 250V
= 400V
6
*Notes:
25
1. V
2. 250
o
C
25
*Notes:
1. V
2. 250
DS
o
1.6
C
8
= 20V
GS
s Pulse Test
*Note: I
7
= 0V
s Pulse Test
D
= 4A
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2.2
12
8

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