FDPF5N50UT Fairchild Semiconductor, FDPF5N50UT Datasheet - Page 4

• Manufacturer Part Number: FDPF5N50UT
• Description: MOSFET N-CH 500V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FDPF5N50UT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 28 W
• Forward Transconductance Gfs (max / Min): 4.8 S
• Gate Charge Qg: 11 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50U / FDPF5N50UT Rev. A-1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
30
10
1
-75
1
Operation in This Area
is Limited by R
-25
vs. Temperature
T
- FDPF5N50UT
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
DS(on)
0.01
0.1
25
Figure 11. Transient Thermal Response Curve - FDP5N50U
1
3
10
*Notes:
0.05
Single pulse
0.5
0.1
0.02
0.2
-5
0.01
1. T
2. T
3. Single Pulse
DC
C
J
75
= 150
= 25
10ms
100
o
C
o
10
1ms
C
*Notes:
[
1. V
2. I
-4
o
125
100
C
D
GS
]
= 250

s
= 0V
30

Rectangular Pulse Duration [sec]
A

1000
175
s
10
-3
(Continued)
10
-2
4
0.01
0.1
Figure 8. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
10
30
1
5
4
3
2
1
0
1
25
10
Operation in This Area
is Limited by R
*Notes:
-1
P
1. Z
2. Duty Factor, D= t
3. T
DM

JM
JC
50
V
T
(t) = 1.4
- T
- FDP5N50U
DS
C
C
, Case Temperature
t
, Drain-Source Voltage [V]
vs. Case Temperature
= P
1
10
t
10
2
DS(on)
o
DM
0
C/W Max.
75
* Z
1

/t
JC
2
(t)
*Notes:
100
10
1. T
2. T
3. Single Pulse
100
1
10ms
DC
C
J
[
= 150
1ms
= 25
o
C
]
100
o
125
o
C
C

s
50
www.fairchildsemi.com

s
1000
150