FDPF6N60ZUT Fairchild Semiconductor, FDPF6N60ZUT Datasheet - Page 3

• Manufacturer Part Number: FDPF6N60ZUT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF6N60ZUT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 33.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP6N60ZU / FDPF6N60ZUT Rev. A
Typical Performance Characteristics
1500
1000
0.1
2.7
2.4
2.1
1.8
1.5
500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
20
10
Figure 1. On-Region Characteristics
1
0
0.1
0.1
0
V
GS
C
C
C
=
oss
rss
iss
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
Drain Current and Gate Voltage
DS
V
3
DS
, Drain-Source Voltage [V]
V
I
,Drain-Source Voltage[V]
D
GS
, Drain Current [A]
= 10V
1
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
1
6
V
*Notes:
GS
1. 250
2. T
= 20V
*Note: T
C
= 25
μ
s Pulse Test
9
*Note:
o
1. V
2. f = 1MHz
C
C
10
= 25
10
GS
o
= 0V
C
12
20
30
3
200
100
0.1
20
10
10
10
1
8
6
4
2
0
1
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
2
0
0
*Notes:
1. V
2. 250
V
DS
SD
μ
= 20V
, Body Diode Forward Voltage [V]
s Pulse Test
V
Q
GS
150
Variation vs. Source Current
and Temperature
g
150
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
o
4
5
1
C
o
V
V
V
C
DS
DS
DS
= 150V
= 300V
= 480V
25
25
o
*Notes:
1. V
2. 250
C
o
C
10
6
2
*Note: I
GS
μ
= 0V
s Pulse Test
D
= 4.5A
www.fairchildsemi.com
15
8
3