FDMS7658AS Fairchild Semiconductor, FDMS7658AS Datasheet - Page 4

• Manufacturer Part Number: FDMS7658AS
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7658AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 7350pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 m Ohms
• Forward Transconductance Gfs (max / Min): 181 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 49 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7658AS Rev.C
Typical Characteristics
0.01
300
100
50
10
0.1
10
10
1
Figure 7.
0.01
8
6
4
2
0
1
0.01
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
D
Figure 11. Forward Bias Safe
= 28 A
Switching Capability
0.1
V
Gate Charge Characteristics
DS
t
0.1
SINGLE PULSE
T
R
T
AV
20
J
A
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
θ
Unclamped Inductive
JA
, TIME IN AVALANCHE (ms)
DS(on)
= MAX RATED
= 25
Q
g
= 125
, GATE CHARGE (nC)
o
C
V
DD
1
o
C/W
= 10 V
1
40
T
J
T
= 125
J
T
= 25
V
J
DD
10
= 25 °C unless otherwise noted
o
o
= 15 V
C
C
10
T
60
J
= 100
V
DD
100
1 ms
10 ms
100 ms
1 s
10 s
DC
= 20 V
o
C
100200
500
80
4
10000
1000
1000
100
180
150
120
100
0.5
10
90
60
30
Figure 10.
50
1
0
10
0.1
25
Figure 12.
-3
f = 1 MHz
V
SINGLE PULSE
R
T
Figure 8.
GS
Current vs Case Temperature
A
θ
JA
V
= 25
Limited by Package
= 0 V
GS
= 125
10
= 10 V
V
V
o
50
-2
C
GS
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
= 4.5 V
c
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
10
t, PULSE WIDTH (sec)
-1
75
1
1
V
GS
R
100
θ
= 10 V
JC
= 1.4
10
o
o
C )
C/W
C
C
C
125
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10
100
1000
150
30