FDPF12N50UT Fairchild Semiconductor, FDPF12N50UT Datasheet

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FDPF12N50UT

Manufacturer Part Number
FDPF12N50UT
Description
MOSFET N-CH 500V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FDPF12N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1395pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP12N50U / FDPF12N50UT Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP12N50U / FDPF12N50UT
N-Channel MOSFET, FRFET
500V, 10A, 0.8Ω
Features
• R
• Low gate charge ( Typ. 21nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.65Ω ( Typ.)@ V
( Typ. 11pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 5A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
G
o
C unless otherwise noted*
= 25
D
S
o
C)
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP12N50U
FDP12N50U
1.33
0.75
62.5
165
0.5
10
40
6
-55 to +150
Ultra FRFET
S
D
16.5
500
±30
300
456
4.5
10
November 2007
FDPF12N50UT Units
FDPF12N50UT Units
62.5
10*
40*
3.0
0.3
42
6*
-
www.fairchildsemi.com
o
W/
tm
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDPF12N50UT Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50U / FDPF12N50UT Rev. A Description = 5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 10A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP12N50U / FDPF12N50UT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 C iss 1000 C oss 500 C rss 0 0 Drain-Source Voltage [V] DS FDP12N50U / FDPF12N50UT Rev. Figure 2. Transfer Characteristics 30 10 *Notes: 1. 250 µ s Pulse Test 4 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

Page 4

... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature - FDPF12N50UT Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF12N50UT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single pulse 1E FDP12N50U / FDPF12N50UT Rev. (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes ...

Page 5

... FDP12N50U / FDPF12N50UT Rev. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP12N50U / FDPF12N50UT Rev. Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP12N50U / FDPF12N50UT Rev. TO-220 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50U / FDPF12N50UT Rev. TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 –0.05 ±0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N50U / FDPF12N50UT Rev. Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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